Effect of N₂O Flow Rate on Reliability of SiO_xFilms Deposited by SiH₄–N₂O Gas Mixture Plasma

Abstract

SiO x films have several advantages as an interlayer dielectric in electronic devices owing to the strong adhesion between SiO x and the substrate. In this study, the coating performance as a function of the N 2 O flow rate was evaluated by electrochemical impedance spectroscopy and potentiodynamic polarization tests in an undisturbed environment. In addition, the coatings were examined by atomic force microscopy and Fourier transform infrared reflection spectroscopy. The SiO x films on a stainless-steel substrate showed the highest coating performance at a N 2 O flow rate of 120 sccm. This was attributed to the films having the lowest porosity value among those examined as a result of the fragmentation of SiO and SiO 2 bonds and the improved surface roughness.

Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD)

“…During plasma-enhanced chemical vapor deposition, the ceramic surface is constantly exposed to a reactive plasma. The reactive species within the plasma, that is, radicals, ions, and photons, can therefore chemically activate the alumina surface by creation of dangling bonds which will then be transformed into Al–O–Si bonds at early deposition stages, , thus enhancing the interfacial strength between the ceramic and the deposited SiO x layer. Furthermore, due to the presence of a surplus of reactive oxygen species within the plasma, the deposited film presents a high degree of cross-linking, as confirmed by the high O to Si ratio (∼1.7).…”

“…transformed into Al-O-Si bonds at early deposition stages39,40 , thus enhancing the interfacial strength between the ceramic and the deposited SiO x layer. Furthermore, due to the presence of a surplus of reactive oxygen species within the plasma, the deposited film presents a high degree of crosslinking, as confirmed by the high O to Si ratio (≈ 1.7).…”

Hygroscopic fluorine‐doped silicon oxide thin‐film‐based large‐area three‐layered moisture barrier using a roll‐to‐roll microwave plasma‐enhanced chemical vapor deposition system

“…At R ≥ 1.5, the intensities of the Si-O and Si-F peaks decreased, thereby indicating that the lack of oxygen radicals by the N 2 O reactant gas had reduced. [52] Figure 4c shows the Si-F 2 bonding ratio of each FT-IR spectra result. The Si-F 2 bond is known to significantly influence the hygroscopicity of the SiOF thin film.…”