Effect of N isotopic mass on the photoluminescence and cathodoluminescence spectra of gallium nitride

Growth and characterization of isotopic natGa15N by molecular‐beam epitaxy

“…Thus it is safe to conclude that the observed ∆E pk of ~6 meV is an isotopic effect. The isotopic mass coefficient for N in GaN is estimated to be dE g /dM N = 6.0 ± 0.1 meV/amu from our experiments, consistent with the previously reported value of dE g /dM N = 6.2 ± 0.7 meV/amu by Manjón et al [4].…”

“…In our previous study [3], we synthesized a Ga 15 N/Ga 14 N multilayer structure to investigate solid-state diffusion and defect structures in GaN by isotope tracer diffusion analysis. Other groups have reported luminescence properties [4], Raman spectra [5], heat capacity [6], and thermal conductivity [7] of Ga 15 N. However, some important information, such as changes in lattice parameters by isotopic enrichment, still remain unclear. Thus, we were motivated to investigate changes in the structure and properties of GaN due to isotopic substitution.…”

Growth of isotopically enriched ZnO nanorods of excellent optical quality

“…[2,3,5,[10][11][12][13] Furthermore, isotopic enrichment is a very useful technique in the study of crystal structure and impurities in semiconductor materials such as ZnO, and comparable materials including Si, GaN and GaP, particularly using optical methods. [14][15][16][17][18][19] Reports using isotopically enriched ZnO samples have included studies of bandgap energies, phonon positions and linewidths and heat capacity, but in all cases using bulk single crystal samples with quite poor optical quality. [20][21][22][23] In this work, we report a relatively fast, easy and reliable method of producing Zn-isotopically enriched ZnO nanorods of very high structural quality, as well as excellent optical quality as determined by low temperature photoluminescence (PL) studies, requiring small quantities of source materials.…”

Superconductivity in diamond, electron–phonon interaction and the zero-point renormalization of semiconducting gaps

“…Excellent candidates to test this conjecture are BN and SiC, but appropriate isotopic samples have not been measured. Isotopic mass and temperature dependence measurements have been recently performed for GaN [34] and ZnO [35].…”

“…4 measurements of the A-exciton frequency vs. T performed for GaN [34,36]. The temperature dependence of gaps or exciton energies is often represented, for the purpose of extrapolating to T ¼ 0 and thus getting the zero-point renormalization, by a single Einstein oscillator (this procedure was followed for diamond in order to obtain the value of 370 meV mentioned above).…”