Effect of mobility on (IV) characteristics of GaAs MESFET

Saidi, Y; Alliouat, W.; Hamma, Issam; Zaabat, Mourad; Azizi, Mounir; Azizi, Cherifa

doi:10.1109/acemp.2011.6490600

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…The GaAs MESFET transistors are attractive devices for the use in microwave applications because of their relatively simple processing and their high-speed and low noise performances [13], [14]. The development and the improvement of new dies of components require new results from modelling, new realisations and new characterisations [15].…”

Section: Resultsmentioning

confidence: 99%

Effect of Mobility on (I-V) Characteristics of Gaas MESFET

Azizi¹,

Azizi²

2017

IJECE

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We present in this paper an analytical model of the current-voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [1] and have been shown to be good.

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Section: Resultsmentioning

confidence: 99%

Effect of Mobility on (I-V) Characteristics of Gaas MESFET

Azizi¹,

Azizi²

2017

IJECE

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“…(4) Breakdown voltage VGDO-the gate current of a small current between the drain and the gate voltage value required to when drain opens [5] .…”

Section: Gaas Mesfet Test Results and Data Analysismentioning

confidence: 99%

Research of Probability Distribution of Semiconductor Test Parameter

Zhang

Zhao

Shen

et al. 2014

AMR

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The probability distribution of electrical characteristic parameters of semiconductor device is an important reference which is used to analyze the reliability and quality consistency of devices. These distributions are considered as normal distribution at home and abroad. This paper utilized mature GaAs MESFET low noise amplifier as analytic sample which is volume production and wide application, and used high-precision Agilent B1505A device analyzer to test main electrical characteristics of 408 samples. After the distribution generation of test results, the Skewness-Kurtosis method was used to analyze probability distributions of the results. At last, the conclusion of distribution of measuring parameter is non-normal distribution was educed.

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Performance analysis of short channel GaAs MESFET fabricated by SAINT method

Rahman

Islam²

2012

2012 15th International Conference on Computer and Information Technology (ICCIT)

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Effect of mobility on (IV) characteristics of GaAs MESFET

Cited by 3 publications

References 5 publications

Effect of Mobility on (I-V) Characteristics of Gaas MESFET

Effect of Mobility on (I-V) Characteristics of Gaas MESFET

Research of Probability Distribution of Semiconductor Test Parameter

Performance analysis of short channel GaAs MESFET fabricated by SAINT method

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