Effect of microwave radiation on the physicochemical properties of some semiconductor materials (GaAs, GaP, InP) and heterostructures, as well as on the parameters of surface-barrier diode structures

Abstract

We have studied the efect of microwave (ern wavelength region) radiation on some semiconductor materials (GaAs, Gap, InP) and surface-barrier diode structures based on them. The changes in photoluminescence spectra of bulk semiconductor materials indicate at a modrfcation of their impurity-defect composition. The changes in electrophysical parameters of the device structures studied seem to result from a structural-compositional modrfcation of the interfaces due to microwave irradiation.

A model for non-thermal action of microwave radiation on oxide film/semiconductor structures

“…It was shown in [1,2,[8][9][10][11][12] that changes in semiconductor defect subsystem under action of microwave radiation may be of thermal as well as nonthermal character. The thermal mechanisms of action of microwave radiation may be classified into three groups for convenience [8,9].…”

“…There are literature data indicating the effects of defect gettering and structural relaxation in semiconductor materials induced by microwave radiation. In those cases, attention is paid to non-thermal nature of such actions as well as on processes induced by them at the metalsemiconductor and insulator semiconductor interfaces [1,2] that are integral parts of MIS transistor structures. At the same time, there is no model in literature that could unambiguously explain mechanism of non-thermal action on the oxide layer/semiconductor structures.…”

Defect engineering using microwave processing in SiC and GaAs

“…It has been reported [11][12][13][14][15] that the impact of MWT on semiconductor structures depends on many factors. The primary factors are the initial level of structural perfectness, conductivity, dielectric permittivity, and structural topology.…”

“…The influence of certain factors, for example, radiation, has been studied quite well-see, for instance, [1][2][3]. At the same time, new agents begin to attract more attention, such as ultrasound loading (USL) [4,5], or microwave treatment (MWT) [6][7][8][9][10][11][12][13][14][15][16][17][18][19]. The MWT has been widely applied owing to its capability of heating solid bodies [6,7].…”

“…The microwave-induced restructuring of impurity defects leads to a decrease in the spread of the Schottky diode parameters [12,16]. Moreover, MWT has been found to induce changes in the properties of Ti, Gd, and Er films deposited on silicon carbide [17], as well as in the reconstruction of GaAs photoluminescence spectra [13,15,16], and the effect depends on both the type of dopant and the crystal structure orientation of the samples. Overall, these facts allow us to consider the MWT as one of the most promising ways to modify semiconductor devices.…”