Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals

Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film

“…So, in the papers [2][3][4][5][6] it has been shown that the short-term treatment of the structures oxidesemiconductor and crystalline semiconductors with microwave radiation of the frequency 2.45 GHz results in the increase of transmission in the optical range, appearance of additional bands in the photoluminescence spectra (PL) spectra of similar structures or redistribution of the intensity of PL bands [2][3][4][5][6]. And here, evaluation of the thermal short-term action of microwave radiation with the frequency 2.45 GHz, which was used in [2][3][4][5][6] in processing the structures oxide -semiconductor and crystalline semiconductors, has shown that the maximum heating of the sample during irradiation did not exceed 2 degrees.…”

“…And here, evaluation of the thermal short-term action of microwave radiation with the frequency 2.45 GHz, which was used in [2][3][4][5][6] in processing the structures oxide -semiconductor and crystalline semiconductors, has shown that the maximum heating of the sample during irradiation did not exceed 2 degrees.…”

Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals

“…The influence of microwave irradiation with vari ous durations and powers was considered in a number of studies [3][4][5][6]. Specifically, the influence of micro wave irradiation on defects states in the surface region of SiO 2 /GaAs semiconductor heterostructures and in n GaAs wafers was studied in [5,6].…”

Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves

“…At first sight, it could be associated with zero-phonon line (ZPL) radiation involving A-centers (DAP consisting of acceptor vacancy of metal and donor impurity), because the energy distance from it to the next peak of the PL side (E max ≈ 1.455 eV) approximately coincides with the energy of the longitudinal optical phonons in CdTe. However, this band has very unusual features for the deep recombination centers and has a relatively wide ZPL and weakly expressed long-wave tail of phonon replicas, which is the feature inherent to extended defects in recombination [4] and can be related to recombination of excitons bound to dislocations [5].…”

“…It reflects the probability of radiative transitions in impurity centers with participation of LO-phonons. Being based on the model [4] S is a function of the distance R between the components of donor-acceptor pair (DAP). Therefore, changes in impurity-defect structure of the samples caused by the microwave treatment are appropriately reflected by changes of the Huang-Rhys factor.…”