Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals

Abstract

The effect of microwave radiation on the luminescence properties of CdS and CdTe:Cl single crystals is studied. It is established that the exposure of these semiconductors to short term (≤30 s) microwave radiation substantially modifies their impurity and defect structure. The mechanisms of transformation of the defect subsystem of II-VI single crystals upon microwave treatment are discussed. It is shown that the exper imentally observed changes are defined by the nonthermal effects of microwave radiation at a power density of 7.5 W cm -2 ; at 90 W cm -2 , nonthermal effects are prevailing.

Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film

“…So, in the papers [2][3][4][5][6] it has been shown that the short-term treatment of the structures oxidesemiconductor and crystalline semiconductors with microwave radiation of the frequency 2.45 GHz results in the increase of transmission in the optical range, appearance of additional bands in the photoluminescence spectra (PL) spectra of similar structures or redistribution of the intensity of PL bands [2][3][4][5][6]. And here, evaluation of the thermal short-term action of microwave radiation with the frequency 2.45 GHz, which was used in [2][3][4][5][6] in processing the structures oxide -semiconductor and crystalline semiconductors, has shown that the maximum heating of the sample during irradiation did not exceed 2 degrees.…”

“…And here, evaluation of the thermal short-term action of microwave radiation with the frequency 2.45 GHz, which was used in [2][3][4][5][6] in processing the structures oxide -semiconductor and crystalline semiconductors, has shown that the maximum heating of the sample during irradiation did not exceed 2 degrees.…”

Adsorption of Ba Atoms Influences the Composition, Emission, and Optical Properties of CdS Single Crystals

“…Single crystals and films of A 2 B 6 semiconductor compounds, in particular CdS, and related multilayer heterostructures are widely used for the creation of various micro-, nano-, and optoelectronic devices, including those for solar power engineering [1][2][3][4]. At present, the influence of heat treatments, laser annealing, microwave processing, and the ion and electron bombardment on the structure, composition, and optical properties of A 2 B 6 compounds and the process of atomic interdiffusion at the interfaces of multilayer systems based on these semiconductors have been thoroughly studied [5][6][7][8][9][10][11][12][13]. In recent years, we have used implantation of Ba + ions into CdTe and CdS [11,12] to obtain doped single crystalline layers and Cd 1 -x Ba x Te and Cd 1 -x Ba x S surface and subsurface layers.…”