We report synchrotron x-ray and magnetic measurements on a set of five
CoCrPt thin films, each sputter-deposited onto CrV underlayers after
successively increasing the base pressure to which the system was pumped
prior to charging with argon. We find that the increase of residual nitrogen
gas in the chamber promotes the formation of fcc-like regions in the mainly
hcp Co-alloy grains by increasing the stacking fault density. The type and
probability of stacking faults were determined from the x-ray data and were
found to increase with increasing base pressure, varying from 9% to 30%
for samples grown at 10-8 and 10-4 Torr, respectively.
These stacking faults cause an increase in regions of low coercivity thus
promoting thermally activated magnetization reversal. We have examined the irreversible
magnetization reversal processes and interactions in detail using remanence,
ΔM and magnetic viscosity measurements.
ΔM measurements provide a measure of the intergranular interactions.
Significant differences were observed in the switching field distributions and ΔM curves. A large
increase in activation volume was also observed for films with over 20%
stacking faults. We propose that this is due to the reduction in the
anisotropy fields caused by the crystallographic defects which then allows
exchange coupling to dominate the reversal, causing cooperative reversal. We
have also investigated the degree of in- and out-of-plane c-axis texture in
the films and find that this is also dependent on the level of nitrogen
contamination, as the c-axis texture is very poor in the film grown in the
worst vacuum conditions. In the other films we see evidence of some degree
of circumferential c-axis texture in the plane of the sample.