Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes

Shi, Zhengxing; Zhao, Long; Xia, Xiaochuan; Zhao, Wenzhu; Wang, Hui; Wang, Jin; Dong, Xiaoli; Zhang, Baolin; Du, Guotong

doi:10.1016/j.jlumin.2011.04.016

Cited by 16 publications

(5 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the main mechanism for pure UV emission is due to the combination of the electron accumulation in the ZnO with high crystallinity by asymmetric band offset from insulating MgO and appropriate hole tunneling using thin i-MgO layers. Additionally, deep level emission (DLE) peaks in the EL emission are attributed to the recombination dropped from the conduction band of ZnO nanowires layer into deep level state, 27 and this contribution is relatively weak in sample 3.…”

Section: Resultsmentioning

confidence: 99%

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p⁺-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer

Jung

Lee

et al. 2011

J. Electrochem. Soc.

View full text Add to dashboard Cite

Pure ultraviolet (UV) light emitting diodes (LEDs) using n-ZnO nanowires as an active layer were fabricated with an insulating MgO dielectric layer as a carrier control layer, where all depositions were continuously performed by metalorganic chemical vapor deposition. The current-voltage curve of the LEDs showed obvious rectifying characteristics, with a threshold voltage of about 7 V in the sample with 4 nm i-MgO. Under the forward bias of the samples with proper MgO thickness, a sharp UV electroluminescence, located at around 380 nm, was emitted from the active ZnO nanowires, while weak visible emission of around 450-700 nm were observed. The pure UV emission from the ZnO nanowires in the n-ZnO/i-MgO/p + -Si heterostructures was attributed to the electron accumulation in the ZnO by asymmetric band offset and preemptive hole tunneling from Si to ZnO by i-MgO.

show abstract

Section: Resultsmentioning

confidence: 99%

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p⁺-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer

Jung

Lee

et al. 2011

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…25,26 Diethyl zinc (DEZn), biscyclopentadienyl-Mg (cp 2 Mg) and oxygen were employed as reactants with high-purity argon (5N) as the carrier gas. The twostep growth approach was employed, firstly the low temperature ZnMgO buffer layer was grown at 430 ℃ , and then the growth temperature was increased to 600 ℃ .…”

Section: Nanostructure Growthmentioning

confidence: 99%

“…For the fabrication of the n-InN/ZnMgO/p-Si core-shell nanorod arrays heterojunction, a ZnMgO layer was prepared on a p-Si(111) substrate by a low-pressure MOCVD system. 25,26 Diethyl zinc (DEZn), bis-cyclopentadienyl-Mg (cp 2 Mg) and oxygen were employed as reactants with high-purity argon (5 N) as the carrier gas. A twostep growth approach was employed, firstly the low temperature ZnMgO buffer layer was grown at 430 1C, and then the growth temperature was increased to 600 1C.…”

Section: Nanostructure Growthmentioning

confidence: 99%

Near infrared electroluminescence of ZnMgO/InN core–shell nanorod heterostructures grown on Si substrate

Zheng

Gao

et al. 2016

Phys. Chem. Chem. Phys.

Self Cite

View full text Add to dashboard Cite

This paper presents a systematic investigation of a ZnMgO/InN core-shell nanorods heterojunction device on a p-Si substrate. Here we demonstrated the heteroepitaxial growth of the well-aligned ZnMgO/InN core-shell nanorods structure, which enabled an increased heterojunction area to improve the carrier injection efficiency of nanodevices by plasma-assisted molecular beam epitaxy combined with metal-organic chemical vapor deposition. In situ X-ray photoelectron spectroscopy measurements were performed on the ZnMgO nanorods, the interface of ZnMgO/InN and the InN core-shell nanorods to fully understand the structure and working mechanism of the heterojunction device. The current transport mechanism has been discussed in terms of the characteristics of current-voltage and the energy band diagram of the n-InN/ZnMgO/p-Si heterojunction. At a low forward voltage, the current transport followed the dependence of I ∼ V(1.47), which was attributed to the deep-level assisted tunneling. When the forward voltage was larger than 10 V, the current followed the relation of I ∼ V(2) because of the radiative recombination process. In accordance with the above conclusion, the near-infrared electroluminescence of the diode could be observed after the forward bias voltage up to 11.6 V at room temperature. In addition, the size quantization effect and the intrinsic electron accumulation of the InN core-shell nanorods were investigated to explain the blueshift and broadened bandwidth. Furthermore, the light output power of about 0.6 microwatt at a fixed wavelength of 1500 nm indicated that our study will further provide a useful route for realizing the near-infrared electroluminescence of InN on Si substrate.

show abstract

“…Therefore, p-n junction devices using n-ZnO are generally fabricated using other p-type semiconductor materials [16,17]. Among these ZnO/Si hetrostructures are preferred because of the compatibility of ZnO-based photodiodes and LEDs with silicon microelectronics technology [18].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of ZnO/MgZnO thin film hetero structures on p-Si for visible light detectors

Kumar¹,

Raghvendra²,

Laha³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

ZnO-and MgZnO-based single-and double-layer heterostructures have been grown using an electron-beam evaporation system. Structural, morphological, optical and electrical characteristics were elaborated for all the configurations. Using x-ray diffraction, it was inferred that a hexagonal wurtzite structure is maintained for both ZnO and MgZnO with fairly good crystallinity. Field emission scanning electron microscopy (FESEM) images showed the homogeneous distribution of particles in ZnO and MgZnO throughout the films. Both atomic force microscopy and FESEM images exhibit a larger size for ZnO particles. The UV emission for ZnO at ∼371 nm and MgZnO at ∼359 nm was anticipated from photoluminescence spectra. The visible photoconductive properties of all the different configurations were studied in the dark and under the illumination of a white light source. The highest responsivities measured for the ZnO/MgZnO/Si structure were 0.242 A W −1 and 0.164 A W −1 for as deposited and annealed at 400 • C, respectively. These results show the suitability of bilayer photo detectors for visible light detection.

show abstract

Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes

Cited by 16 publications

References 27 publications

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p⁺-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p⁺-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer

Near infrared electroluminescence of ZnMgO/InN core–shell nanorod heterostructures grown on Si substrate

Growth and characterization of ZnO/MgZnO thin film hetero structures on p-Si for visible light detectors

Contact Info

Product

Resources

About

Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes

Cited by 16 publications

References 27 publications

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p+-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p+-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer

Near infrared electroluminescence of ZnMgO/InN core–shell nanorod heterostructures grown on Si substrate

Growth and characterization of ZnO/MgZnO thin film hetero structures on p-Si for visible light detectors

Contact Info

Product

Resources

About

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p⁺-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p⁺-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer