2015
DOI: 10.1016/j.tsf.2015.05.050
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Effect of main gas and carrier gas on ZnO thin films deposited by atmospheric pressure plasma jet

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Cited by 11 publications
(4 citation statements)
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“…156 Chou et al observed lower sheet resistance in their Ga-ZnO lms prepared using an atmospheric plasma jet when H 2 gas was included, which was believed to cause the formation of shallow donor states in ZnO. 157 Thus in our case, the crystallinity of the nTPs and NPs, as evidenced by TEM-SAED and XRD, could be due to other energetic species in the microplasma aerglow.…”
Section: Formation Mechanism Of Zno Ntps/nps From Microplasmamentioning
confidence: 53%
“…156 Chou et al observed lower sheet resistance in their Ga-ZnO lms prepared using an atmospheric plasma jet when H 2 gas was included, which was believed to cause the formation of shallow donor states in ZnO. 157 Thus in our case, the crystallinity of the nTPs and NPs, as evidenced by TEM-SAED and XRD, could be due to other energetic species in the microplasma aerglow.…”
Section: Formation Mechanism Of Zno Ntps/nps From Microplasmamentioning
confidence: 53%
“…The enhancement in crystallinity increases both carrier mobility and carrier concentration and results in a decrease of resistivity, a drastically opposite behavior to AZO. Also, these authors showed the influence of the texture of the SiO x sub‐layer on the haze value of the stack GZO/ SiO x in the visible and near‐infrared regions, rougher surfaces contributing to increase the haze . Then, APPJ is an effective method for preparing textured TCO.…”
Section: Photovoltaic Materials By Atmospheric Pressure Plasmasmentioning
confidence: 99%
“…Also, these authors showed the influence of the texture of the SiO x sub-layer on the haze value of the stack GZO/ SiO x in the visible and near-infrared regions, rougher surfaces contributing to increase the haze. [108] Then, APPJ is an effective method for preparing textured TCO.…”
Section: Transparent Conductive Contactsmentioning
confidence: 99%
“…Since 1975 the four-point probe method has been established as a reference procedure of the American Society for Testing and Materials Standards in the microelectronics industry [2], and has been widely used for characterizing the electrical properties of thin films for many applications, such as solar cells [3,4], liquid crystal displays, light-emitting devices [5], flat panel displays [6] and a variety of microelectronics [7] and photovoltaics [8]. For example, the performance of thin-film solar cells depends greatly on the magnitude and uniformity of the electrical properties of a transparent conductive oxide (TCO) [9,10].…”
Section: Introductionmentioning
confidence: 99%