Finite element analysis and equivalent parallel-resistance model for conductive multilayer thin films

Chen, Yu-Yi; Juang, Jia-Yang

doi:10.1088/0957-0233/27/7/074006

Cited by 21 publications

(12 citation statements)

References 27 publications

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“…It can be modeled as an equivalent circuit with multiple resistances as long as its total thickness is smaller than approximately half of the probe spacing. [44] The structure is modeled as a periodic array of stripes of two materials, with different width and thickness, and high or low sheet resistance. The stripes are placed on top of a layer of unmodified material.…”

Section: (9 Of 11)mentioning

confidence: 99%

Anisotropic Resistivity Surfaces Produced in ITO Films by Laser‐Induced Nanoscale Self‐organization

López‐Santos

Puerto

Siegel

et al. 2020

Advanced Optical Materials

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emitting diodes, flat panel displays, etc.) and energy harvesting (photovoltaics, low emissivity coatings, etc.). [1] They are produced by creating electron degeneracy in a wide bandgap oxide either introducing non-stoichiometry (solid solutions) and/ or appropriate dopants, like Sb or F. [2] This is usually achieved in mixtures of different Group III oxides with metal oxides where the metal can be a part of the semiconductor oxide or act as dopant. This leads to different families of TCOs including AZO (aluminum zinc oxide), IZO (indium zinc oxide), ITO (indium tin oxide), GZO (gallium zinc oxide), and so on. Among them ITO (typically ≈90% wt% In 2 O 3 + 10 wt% SnO 2) plays a key role, especially to produce transparent conductive electrodes (TCEs) in flat-panel displays. Regarding the structuring of ITO films, although wet chemical etching is suitable for producing micron-width electrodes, the need for rapid, and mask-less patterning of large areas led to investigation of the use of laser structuring already in the late 90s. [3] A similarly important application of lasers for processing TCOs is their use for sintering spin-coated films formed by nanoparticles, especially on flexible substrates. [4-6] However, the peculiarities of its absorption spectrum and the regular use of transparent substrates impose limitations in Highly anisotropic resistivity surfaces are produced in indium tin oxide (ITO) films by nanoscale self-organization upon irradiation with a fs-laser beam operating at 1030 nm. Anisotropy is caused by the formation of laser-induced periodic surface structures (LIPSS) extended over cm-sized regions. Two types of optimized structures are observed. At high fluence, nearly complete ablation at the valleys of the LIPSS and strong ablation at their ridges lead to an insulating structure in the direction transverse to the LIPSS and conductive in the longitudinal one. A strong diminution of In content in the remaining material is then observed, leading to a longitudinal resistivity ρ L ≈ 1.0 Ω•cm. At a lower fluence, the material at the LIPSS ridges remains essentially unmodified while partial ablation is observed at the valleys. The structures show a longitudinal conductivity two times higher than the transverse one, and a resistivity similar to that of the pristine ITO film (ρ ≈ 5 × 10 −4 Ω•cm). A thorough characterization of these transparent structures is presented and discussed. The compositional changes induced as laser pulses accumulate, condition the LIPSS evolution and thus the result of the structuring process. Strategies to further improve the achieved anisotropic resistivity results are also provided.

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Section: (9 Of 11)mentioning

confidence: 99%

Anisotropic Resistivity Surfaces Produced in ITO Films by Laser‐Induced Nanoscale Self‐organization

López‐Santos

Puerto

Siegel

et al. 2020

Advanced Optical Materials

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“…Fig. 11a shows that the Ti/Au sample has a lower sheet resistance than pure Au which can be attributed to the two layers acting as parallel resistors 28 . Data normalization has been performed with respect to the average sheet resistance (R) measured at the 20-Au sample.…”

Section: Adhesion Layer Effect On Bilayer Thin-film Electrical Resistmentioning

confidence: 99%

Influence of Ti and Cr Adhesion Layers on Ultrathin Au Films

Todeschini

Fanta

Jensen

et al. 2017

ACS Appl. Mater. Interfaces

184

131

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Efficient adhesion of gold thin films on dielectric or semiconductor substrates is essential in applications and research within plasmonics, metamaterials, 2D materials, and nanoelectronics. As a consequence of the relentless downscaling in nanoscience and technology, the thicknesses of adhesion layer and overlayer have reached tens of nanometers, and it is unclear if our current understanding is sufficient. In this report, we investigated how Cr and Ti adhesion layers influence the nanostructure of 2-20 nm thin Au films by means of high-resolution electron microscopy, complemented with atomic force microscopy and X-ray photoelectron spectroscopy. Pure Au films were compared to Ti/Au and Cr/Au bilayer systems. Both Ti and Cr had a striking impact on grain size and crystal orientation of the Au overlayer, which we interpret as the adhesion layer-enhanced wetting of Au and the formation of chemical bonds between the layers. Ti formed a uniform layer under the Au overlayer. Cr interdiffused with the Au layer forming a Cr-Au alloy. The crystal orientation of the Au layers was mainly [111] for all thin-film systems. The results showed that both adhesion layers were partially oxidized, and oxidation sources were scrutinized and found. A difference in bilayer electrical resistivity between Ti/Au and Cr/Au systems was measured and compared. On the basis of these results, a revised and more detailed adhesion layer model for both Ti/Au and Cr/Au systems was proposed. Finally, the implications of the results were analyzed, and recommendations for the selection of adhesion layers for nano-optics and nanoelectronics applications are presented.

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“…[32] The electrical resistivities of the TiB x samples, with the TiN buffer layer, were obtained by measuring the sheet resistance with a four-point probe (Jandel RM3000). The effective resistivity of the TiB x layer was obtained using the following equation [33]:…”

Section: Methodsmentioning

confidence: 99%

Microstructure and Materials Properties of Understoichiometric TiBx Thin Films Grown by HiPIMS

Thörnberg

Pališaitis²,

Hellgren³

et al. 2020

Preprint

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In the present research article we report synthesis of TiBx, 1.43n-situ mass- and energy-spectroscopy is used to explain the obtained compositional range. Excess B in overstoichiometric TiBx thin films from DCMS results in a hardness up to 37.7±0.8 GPa, attributed to the formation of an amorphous B-rich tissue phase separating stoichiometric TiB2 columnar structures. With a particular focus on characterization of the understoichiometric samples, we show that understoichiometric TiB1.43 thin films synthesized by HiPIMS exhibit a superior hardness of 43.9±0.9 GPa, where the deficiency of B is found to be accommodated by Ti planar defects. The apparent fracture toughness, electrical resistivity and thermal conductivity of the same sample is 4.2±0.1 MPa√m, 367±7 μΩ·cm and 5.1 W/(m.K), respectively, as compared to corresponding values for overstoichiometric TiB2.20 DCMS thin film samples of 3.2±0.1 MPa√m, 309±4 μΩ·cm and 3.0 W/(m.K).

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Finite element analysis and equivalent parallel-resistance model for conductive multilayer thin films

Cited by 21 publications

References 27 publications

Anisotropic Resistivity Surfaces Produced in ITO Films by Laser‐Induced Nanoscale Self‐organization

Anisotropic Resistivity Surfaces Produced in ITO Films by Laser‐Induced Nanoscale Self‐organization

Influence of Ti and Cr Adhesion Layers on Ultrathin Au Films

Microstructure and Materials Properties of Understoichiometric TiBx Thin Films Grown by HiPIMS

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