Abstract:Research related to semiconductor devices often relies on wafer fabrication. The fabrication of Silicon (Si) based devices by anisotropic wet etching can be affected by many etching parameters such as etching temperature, crystal orientation and percent of composition. Most of the anisotropic wet etchings by KOH solution done before were conducted at temperature over 70°C. We found that the temperatures are not suitable to fabricate ring waveguide as the waveguide wall will collapse at such high temperature. T… Show more
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