Effect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnects

Abstract

The addition of a low frequency RF (LFRF) component during plasma-enhanced chemical vapor deposition of porous SiCOH ultra low-κ films allowed for the incorporation of higher carbon content without lowering the Young's modulus or increasing the dielectric constant. The porous SiCOH films typically contain carbon bonded into the silica matrix primarily as Si(CH3)x species. The low frequency RF increased the total carbon content by adding CH2 and –CH = CH- species with some reduction of Si(CH3)x species. It also altered the SiOx bonding structure by increasing network SiOx bonding at the expense of the suboxide, indicating an increase in SiOx crosslink density. Although higher carbon content usually lowers the modulus of porous SiCOH films, the modulus of the higher carbon films generated by LFRF did not decrease because of their increased network SiOx bonding.

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

“…174,175 In addition for plasma deposition processes, ion bombardment of the surface during deposition can lead to development of additional stresses and in many cases is used to intentionally manipulate the final post deposition stress. 176 For low-k ILD plasma deposited materials, ion bombardment is typically minimized 177,178 and CTE mismatch between the film and substrate leads to the development of tensile stresses. [154][155][156] These tensile stresses are generally undesired as they can lead to spontaneous channel crack formation (see Figure 4).…”

“…Incorporation of terminal organic groups in plasma deposited low-k ILD films is typically achieved using either organosilane or alkoxysilane precursors in combination with plasma conditions that minimize film surface ion bombardment. 156,177,178 The resulting pores in typical lowk ILD materials are also larger at ≥0.8 nm. 77 Thus, despite using similar precursors and deposition methods, the significantly different material properties exhibited between low-k DB and ILD materials are due to differences in the network structure, terminal bonding ligands, and size of nanopores.…”

Response surface methodology as a predictive tool for the fabrication of coatings with optimal anti-fogging performance

“…Absorptions pertaining to CH3 and Si-H groups were found to be sensitive to N2O. For instance, the symmetric (νs) and asymmetric (νa) stretching of CH3 groups at 2909 and 2972 cm -1 , respectively, and the SiCH3 (νa,s) stretching and CH3 rocking (ρ) vibrations in the 750− 850 cm -1 range diminish in intensity with [N2O] / [TMCTS] ratio [39][40][41][42]. The sharp decrease observed in the CH3 symmetric (δs) and asymmetric (δa) bending at 1275 cm -1 and 1410 cm -1 , respectively, as the N2O concentration in the discharge increases, supports the oxidative removal of CH3 groups.…”

Unveiling the origin of the anti-fogging performance of plasma-coated glass: Role of the structure and the chemistry of siloxane precursors

“…To ensure coating deposition at room temperature, at least one layer of an insulating material is placed between the electrodes. DBDs have made it possible to prepare siloxane-based coatings with electrical [25,26] or protective features [27] , so as to meet the ever-growing demand for functional materials in the optical industry, the food industry, and the microelectronic industry. Despite this interest, no papers on DBDs for the deposition of siloxane-based anti-fogging coatings on glass have thus far been evidenced.…”