Effect of low dose γ-radiation on the annealing temperature of radiation defects in ion implanted MOS structures

Kaschieva, S.; Alexandrova, S.

doi:10.1016/s0921-5107(02)00290-8

Cited by 8 publications

(8 citation statements)

References 7 publications

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“…Consequently, defects and interface traps can not hinder the MPS construction device. The D it values are of the same order as those for the Schottky structures reported by several authors [2,6,[10][11][12][13][14][24][25][26][27].…”

Section: Resultssupporting

confidence: 78%

“…Besides all these advantages, semiconductors have also several disadvantages. The semiconductors' electrical conductivity value ranges between that of inorganic semi-conductors and that of insulators [5][6][7][8][9][10][11][12][13][14][15][16][17]. The reason for this drawback can be due to the relatively inefficient hopping process which is primarily bound by van der Waals interaction.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Gökmen

2021

Phys. Scr.

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In the present study, rubrene-based Schottky barrier structures have been formed by using the evaporation technique to investigate the conductance–voltage (G–V) and capacitance-voltage (C–V) values of the effect of the 60Co gamma-ray irradiation. The conductance and capacitance values were measured before and after 60Co gamma-ray radiation at 100 kHz, 500 kHz and 1 MHz. The frequency-dependent effects of interface state density and series resistance with and without irradiation in dark were analyzed at room temperature. The analysis results imply that values of forward and reverse C characteristics decrease the rate depending on gamma-ray irradiation and the increment of voltage due to the exchange of majority carriers between the majority carrier band of semiconductor and interface states. The irradiation dose and frequency increase show irradiation dispersion at the accumulation region when an A.C. signal is applied to the semiconductor structures. The G–V characteristics of rubrene-based Schottky barrier structures change with gamma radiation dose at different frequencies. Also, these characteristics relate to the density of the interface states. The analyses reveal that D it values decrease with the increase in frequency before 60Co gamma-ray irradiation. These values also decrease with the increase in frequency at the same radiation doses after 60Co gamma-ray irradiation. They decrease with the increase in irradiation doses at the same frequency, except for 100 kHz. Experimental results indicate that rubrene-based Schottky barrier structures can be altered using 60Co gamma-ray irradiation. The experimental contributions indicate a substantial step forward in the structure-function relationship in the benchmark organic semiconductors.

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Section: Resultssupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Gökmen

2021

Phys. Scr.

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“…Boron-related radiation defects in B-doped p-Si were specially studied for Si-SiO 2 structures [31][32][33][34][35][36][37]. The system exposed to irradiation with ~10 MeV electrons and also low-dose gamma-rays.…”

Section: Analysis Of Published Datamentioning

confidence: 99%

Role of boron in formation of secondary radiation defects in silicon

Pagava

Chkhartishvili

Maisuradze

et al. 2015

EEJET

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Ґрунтуючись на колишні роботи авторів, досліджено роль домішок бору (B) у формуванні вторинних радіаційних дефектів в кристалах кремнію (Si). Залежності цих процесів від температури ізохронного відпалу (в інтервалі 80-600 °C) вивчені з використанням холлівських вимірювань температурних залежностей (в інтервалі 100-300 К) концентрації і рухливості дірок в кремній до і після опромінення електронами з енергією близько 8 МеВ при дозі 5•10 15 см-2 Ключові слова: кремній, легуючий бор, радіаційні дефекти і комплекси Основываясь на прежние работы авторов исследована роль примесей бора (B) в формировании вторичных радиационных дефектов в кристаллах кремния (Si). Зависимости этих процессов от температуры изохронного отжига (в интервале 80-600 °C) изучены с использованием холловских измерений температурных зависимостей (в интервале 100-300 К) концентрации и подвижности дырок в кремний до и после облучения электронами с энергией около 8 МэВ при дозе 5•10 15 см-2 Ключевые слова: кремний, легирующий бор, радиационные дефекты и комплексы

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“…Some article has been made on how the structural properties of an organic composite interfacial layer, oxideinsulator film structures, and metal electrodes that are deposited on semiconductors correlated on radiation [27][28][29][30][31][32][33][34][35][36]. To examine the effect of 60 kGy and 30 kGy 60 Co γ-irradiation on the electrical properties of the Al/ Coronene/p-Si Schottky structure, the structure was examined before and after the gamma radiation [36].…”

Section: Introductionmentioning

confidence: 99%

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

2021

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In this work, the impact of gamma-ray irradiation (γ) on graphene/Al 2 O 3 /p-type Si structure has been investigated. For this, temperature-sensitive current-voltage (I-V ) analyses of the structure exposed to gamma radiation have been carried out. I-V measurements have been made between −3 V and 3 V to analyze electrical properties of the graphene/Al 2 O 3 /p-type Si before and after 60 Co γirradiation. I-V measurements of the structure have been made at the range of 300 K-405 K. Thermionic emission (TE) theory and Cheung's methods have been used to examine the electrical features of the structure. The discrimination of all experimental results has been done by using Principal Component Analysis (PCA). In PCA analysis, the first two principal components (PC1=75.6% and PC2=20.9%) accounted for 96.5% of the variance, which is a very good result.

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Effect of low dose γ-radiation on the annealing temperature of radiation defects in ion implanted MOS structures

Cited by 8 publications

References 7 publications

Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Role of boron in formation of secondary radiation defects in silicon

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

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Effect of low dose γ-radiation on the annealing temperature of radiation defects in ion implanted MOS structures

Cited by 8 publications

References 7 publications

Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Role of boron in formation of secondary radiation defects in silicon

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al2O3/p-type Si structure

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The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure