Role of boron in formation of secondary radiation defects in silicon

Pagava, T. A.; Chkhartishvili, Levan; Maisuradze, N. I.; Esiava, R.; Dekanosidze, Shorena; Beridze, Manana; Mamisashvili, Nana

doi:10.15587/1729-4061.2015.47224

Cited by 2 publications

(2 citation statements)

References 37 publications

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“…In the 150–200 °C temperature range, the BCD defect dissociates, and substitutional boron (B S ) is recovered [ 34 , 35 , 36 , 40 , 41 , 42 ]. It is worth mentioning that B S can also react with silicon vacancy (V) or divacancy (V 2 ) and form B S V and B S V 2 complexes [ 43 , 44 , 45 , 46 ]. These vacancy-type defects have different characteristics compared to those of BCD in terms of generation, thermal stability, and charge trapping.…”

Section: Introductionmentioning

confidence: 99%

“…The B S V defect dissociates at 260 K, and thus it is not detected in samples irradiated at ambient temperatures [ 43 , 44 ]. On the other hand, B S V 2 can form only in heavily doped material [ 44 , 45 ] or after annealing out divacancies at temperatures above 250 °C [ 46 ]. Thus, the AR process in samples irradiated at ambient temperatures is explained by considering a reaction between the substitutional boron (B s ) and silicon interstitials (Si i ) created by irradiation.…”

Section: Introductionmentioning

confidence: 99%

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Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon—Electronic Properties of Configurational Transformations

Nitescu

Beșleagă

Nemneş

et al. 2023

Sensors

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The acceptor removal process is the most detrimental effect encountered in irradiated boron-doped silicon. This process is caused by a radiation-induced boron-containing donor (BCD) defect with bistable properties that are reflected in the electrical measurements performed in usual ambient laboratory conditions. In this work, the electronic properties of the BCD defect in its two different configurations (A and B) and the kinetics behind transformations are determined from the variations in the capacitance-voltage characteristics in the 243–308 K temperature range. The changes in the depletion voltage are consistent with the variations in the BCD defect concentration in the A configuration, as measured with the thermally stimulated current technique. The A→B transformation takes place in non-equilibrium conditions when free carriers in excess are injected into the device. B→A reverse transformation occurs when the non-equilibrium free carriers are removed. Energy barriers of 0.36 eV and 0.94 eV are determined for the A→B and B→A configurational transformations, respectively. The determined transformation rates indicate that the defect conversions are accompanied by electron capture for the A→B conversion and by electron emission for the B→A transformation. A configuration coordinate diagram of the BCD defect transformations is proposed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon—Electronic Properties of Configurational Transformations

Nitescu

Beșleagă

Nemneş

et al. 2023

Sensors

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Qualitative Model of Electrical Conductivity of Irradiated Semiconductor

Temur,

Levan,

Manana

et al. 2024

IgMin Res

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There is constructed a qualitative model of the electrical conductivity of semiconductors irradiated with sufficiently high-energy particles. At certain conditions (irradiation temperature and dose, and subsequent thermal treatment), high-energy particles fluence, in addition to primary and secondary point radiation defects, forms a number of nano-sized disordered regions, highly conductive (“metallic”) compared to the semiconductor matrix. Their high total volume fraction can lead to the charge major carriers’ effective Hall mobility significantly exceeding that of the matrix. Due to elastic stresses created by these disordered inclusions, a high concentration of point radiation defects tends to form defective shells. In certain temperature ranges, such nanosized core-shell structures act as capacitors storing the electric charge sufficient for the Coulomb blockade of the major current carriers. Transformation of high-conductive inclusions into low-conductive (“dielectric”) ones manifests in a noticeable decrease in effective Hall mobility. The proposed model qualitatively explains all the experimental data available on single-crystalline n- and p-type silicon irradiated with high-energy electrons and protons and isochronously annealed.

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Role of boron in formation of secondary radiation defects in silicon

Cited by 2 publications

References 37 publications

Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon—Electronic Properties of Configurational Transformations

Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon—Electronic Properties of Configurational Transformations

Qualitative Model of Electrical Conductivity of Irradiated Semiconductor

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