2011
DOI: 10.3390/ijms12096320
|View full text |Cite
|
Sign up to set email alerts
|

Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

Abstract: Thin and transparent films of doped cadmium sulfide (CdS) were obtained on commercial glass substrates by Chemical Bath Deposition (CBD) technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that low… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
8
0

Year Published

2013
2013
2020
2020

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 22 publications
(8 citation statements)
references
References 18 publications
0
8
0
Order By: Relevance
“…1h) show that Sample d (pure CdS nanowires) only has a narrow bandedge emission band at 520 nm, while Samples e-g (with increasing doping) have additional broad strong emission bands spanning from $540 to $720 nm, which originate from the different dopant-induced intrinsic or extrinsic defects. 13,15,[20][21][22] The relative intensity of trap-state emission to bandedge emission increases signicantly from Sample d to g, which well explains the changed color in the real-color PL photographs (Fig. 1d-g).…”
Section: Resultsmentioning
confidence: 81%
See 1 more Smart Citation
“…1h) show that Sample d (pure CdS nanowires) only has a narrow bandedge emission band at 520 nm, while Samples e-g (with increasing doping) have additional broad strong emission bands spanning from $540 to $720 nm, which originate from the different dopant-induced intrinsic or extrinsic defects. 13,15,[20][21][22] The relative intensity of trap-state emission to bandedge emission increases signicantly from Sample d to g, which well explains the changed color in the real-color PL photographs (Fig. 1d-g).…”
Section: Resultsmentioning
confidence: 81%
“…The existence of these SnS 2 -related vibration modes gives direct evidence that tin has been successfully incorporated into the CdS wires. According to the literature, 20,21 Sn ions of slightly bigger radius were found to substitute the Cd ions in the lattice without changing the crystal structure of CdS, but introducing defect states. It is this dilute doping concentration that allows for the co-existence of high crystalline quality and considerable trap-state emission in these nanowires, 13 which is entirely different from those heavily doped semiconductor nanostructures that usually suffer from high structural disorders and rough surfaces.…”
Section: Resultsmentioning
confidence: 99%
“…30,31 The EDAX investigations reveal that prepared nanoparticles are composed of Tb, Sn, and O. † The peaks for Tb are observed at about 1.5, 6.3 and 7.1 keV.…”
Section: Resultsmentioning
confidence: 99%
“…To make them suitable for photovoltaic applications, the efficiency of CdS semiconductor films is improved by changing its optical and/or electrical properties by doping with elements like indium , tin , and silver . As good optical transmittance is one of the prerequisites for window layers in thin film solar cells, there is a need for a viable technique for depositing highly transparent CdS thin films . In this paper, we present a report on the fabrication of highly transparent Mo doped CdS films using an improved successive ionic layer adsorption and reaction (ISILAR) technique .…”
Section: Introductionmentioning
confidence: 99%