Effect of leaving group design on EUV lithography performance

Ongayi, Owendi; Jain, Vipul; Coley, Suzanne M.; Valeri, David; Kwok, Amy; Quach, Dung; Wagner, Mike; Cameron, Jim; Thackeray, Jim

doi:10.1117/12.2011600

Cited by 6 publications

(5 citation statements)

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“…Line-and-space patterns with 14-17 nm halfpitches have been fabricated at exposure doses of 20-40 mJ cm ¹2 . [5][6][7][8] For the further improvement of resolution and/or sensitivity, the stochastic events in the resist processes are a serious concern. [9][10][11][12] Typical phenomena caused by the stochastic events are line edge/width roughness (LER/LWR) and stochastic defect generation such as pinching and bridges.…”

Section: Introductionmentioning

confidence: 99%

Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography

Kozawa

Santillan

Itani

2014

Jpn. J. Appl. Phys.

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The suppression of stochastic effects such as line edge roughness (LER) and stochastic defect generation is required for the high-volume production of semiconductor devices with 11 nm critical dimension using extreme ultraviolet (EUV) lithography. In this study, the effects of the molecular weight and protection ratio of a resist polymer on LER and stochastic defect generation were investigated, assuming line-and-space patterns with 11 nm half-pitch. By increasing the molecular weight, LER and the probability of stochastic defect generation were decreased. The negative effect caused by the increase of molecular weight is the increase of the minimum dissolution block size in the development process. By increasing the protection ratio, a similar effect was expected. However, LER and the probability of stochastic defect generation were not significantly decreased because of the decrease of the quantum efficiency of acid generation caused by the protection of proton sources. It is important to increase the protection ratio without decreasing the quantum efficiency of acid generation for the suppression of LER and stochastic defect generation.

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Section: Introductionmentioning

confidence: 99%

Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography

Kozawa

Santillan

Itani

2014

Jpn. J. Appl. Phys.

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“…Thackeray et al reported a good performance EUV resist showing 17 nm HP resolution at a dose of 14.5 mJ/cm 2 and achieved very low outgassing level by modifying PAG unit monomer ratio and introducing electron rich element in the resist polymer [22]. A dissolution rate study of this class of resists varying the leaving group design was conducted by Ongayi et al It indicated that lower Ea, hydrophilicity, and larger size of leaving group lead higher sensitivity, however, hydrophobicity seemed required to some extent for the better resolution in order to prevent pattern collapse from capillary force between lines [23]. In another study by [26].…”

Section: Polymer Bound Pag Typementioning

confidence: 99%

Recent EUV Resists toward High Volume Manufacturing

Nakagawa¹,

Naruoka²,

Nagai³

2014

J. Photopol. Sci. Technol.

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Extreme ultraviolet lithography (EUVL) has been an attractive method as next generation lithography (NGL) over 20 years, and high-volume manufacturing (HVM) is now going to be realized by great progresses in materials as well as EUV source power enhancement. In this paper, recent reported materials for EUVL are summarized ranging from conventional organic material base resists to novel inorganic material base resists.

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“…This resist is based on the low Rmax concept described herein coupled with some of our other novel approaches discussed previously. [9,[16][17][18] …”

Section: Resist Mottling and Rls Improvementsmentioning

confidence: 99%

“…[15] In the recent past we have reported on progress in the following areas: EUV polymer synthesis, [16] EUV sensitization, [17] CDU-sensitivity improvement, [9] leaving group design [18] and molecular resists. [19] In this paper, we will update on our progress in the critical area of RLS and RCS performance.…”

Section: Introductionmentioning

confidence: 99%

Progress Towards Production Worthy EUV Photoresists: Balancing Litho, Outgassing and OOB Performance

Cameron¹,

Thackeray²,

Jain³

et al. 2014

J. Photopol. Sci. Technol.

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Implementation of EUV Lithography (EUVL) for device high volume manufacturing (HVM) requires advanced photoresists capable of meeting the criteria of advanced logic and memory design rules. To achieve the level of performance required, resists must show excellent performance in terms of resolution, LWR (or CDU) and sensitivity. In addition, resists must meet the outgassing criteria required for HVM on the NXE toolset. Lastly, it is anticipated that resists with low OOB sensitivity will also be required.In this paper, we describe our progress in all of these areas. Based on our results, we believe we are on track to deliver production worthy resists for the EUVL era.

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Effect of leaving group design on EUV lithography performance

Cited by 6 publications

References 0 publications

Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography

Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography

Recent EUV Resists toward High Volume Manufacturing

Progress Towards Production Worthy EUV Photoresists: Balancing Litho, Outgassing and OOB Performance

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