Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

Laha, Pinaki; Panda, Alaka; Dahiwale, S.S.; Date, Kalyani; Patil, K.R.; Barhai, P.K.; Das, Sudip Kumar; Banerjee, Indrani; Mahapatra, S. K.

doi:10.1016/j.tsf.2010.08.089

Cited by 12 publications

(4 citation statements)

References 24 publications

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“…So, after some time only electronic current is dominating. This value is close to value of perfect ionic conductor and it concludes that the present system is ion dominating with most of the charge transfer (~99 %) by ions with negligible electron contribution [77][78].…”

Section: Conductivity Stability and Ion Transference Numbersupporting

confidence: 78%

Optimization of salt concentration and explanation of two peak percolation in blend solid polymer nanocomposite films

Arya

Sharma

2018

J Solid State Electrochem

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The present paper report is focused toward the preparation of the flexible and freestanding blend solid polymer electrolyte films based on PEO-PVP complexed with NaPF6 by solution cast technique. The structural/morphological features of the synthesized polymer nanocomposite films have been investigated in detail using X-ray diffraction, Fourier transform infra-red spectroscopy, field emission scanning electron microscope, and atomic force microscopy techniques. The film PEO-PVP+NaPF6 (Ö/Na + = 8) exhibits highest ionic conductivity ~5.92×10 -6 S cm -1 at 40 °C and ~2.46×10 -4 S cm -1 at 100 °C. The temperature dependent conductivity shows Arrhenius type behavior and activation energy decreases with the addition of salt. The high temperature (100 °C) conductivity monitoring is done for the optimized PEO-PVP+NaPF6 (Ö/Na + =8) highly conductive system and the conductivity is still maintained stable up to 160 h (approx. 7 days). The thermal transitions parameters were measured by the differential scanning calorimetry (DSC) measurements. The prepared polymer electrolyte film displays the smoother surface in addition of salt and a thermal stability up to 300 o C. The ion transference number (tion) for the highest conducting sample is found to be 0.997 and evidence that the present system is ion dominating with negligible electron contribution. Both linear sweep voltammetry and cyclic voltammetry supports the use of prepared polymer electrolyte with long-term cycle stability and thermal stability for the solid state sodium ion batteries. Finally, a two peak percolation mechanism has been proposed on the basis of experimental findings.

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Section: Conductivity Stability and Ion Transference Numbersupporting

confidence: 78%

Optimization of salt concentration and explanation of two peak percolation in blend solid polymer nanocomposite films

Arya

Sharma

2018

J Solid State Electrochem

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“…[1][2][3] Several dielectric stacks have been proposed as great candidates for nonvolatile memory applications (flash memory, etc.). 2,4 Metalinsulator-metal capacitors with HfO 2 and Al 2 O 3 dielectric stacks have been subject to different studies in RF and analog circuits applications.…”

Section: Introductionmentioning

confidence: 99%

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Hajjam¹,

Baboux²,

Calmon

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high tunnel current levels, low thermionic current, and low capacitance. The authors use atomic layer deposition to fabricate Al2O3 and HfO2 thin layers. Tunnel barrier engineering allows the achievement of low capacitance Al2O3 and HfO2 tunnel junctions using optimized annealing and plasma exposure conditions. Different stacks were designed and fabricated to increase the transparency of the tunnel junction while minimizing thermionic current. This tunnel junction is meant to be integrated in SET to enhance its electrical properties (e.g., operating temperature, ION/IOFF ratio).

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“…The increment in the crystallization degree could be the main reason for the enhancement of the leakage current after 500 °C annealing. It has been reported that grain boundaries may act as leakage paths where mobile charges can be transported through the percolation path along the grain boundaries in crystalline films [40][41][42]. The decrement in the leakage current with higher annealing temperatures may be attributed to the improvement in the oxide quality [43,44], i.e.…”

Section: Annealing Influence On Gate Leakage Currentmentioning

confidence: 99%

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

Lök

Kaya

Yılmaz

2018

Semicond. Sci. Technol.

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In this work, the thermal phase separation and annealing optimization of ZrSiO 4 thin films have been carried out. Following annealing optimization, the frequency-dependent electrical characteristics of the Al/ZrSiO 4 /p-Si/Al MOS capacitors were investigated in detail. The chemical evolution of the films under various annealing temperatures was determined by Fourier transform infrared spectroscopy (FTIR) measurements. The phase separation was determined by x-ray diffraction (XRD) measurements. The electrical parameters were determined via the capacitance-voltage (C-V ), conductance-voltage (G/ω) and leakage-current-voltage (I g -V g ).The results demonstrate that zirconium silicate formations are present at 1000 °C annealing with the SiO 2 interfacial layer. The film was in amorphous form after annealing at 250 °C. The tetragonal phases of ZrO 2 were obtained after annealing at 500 °C. When the temperature approaches 750 °C, transitions from the tetragonal phase to the monoclinic phase were observed. The obtained XRD peaks after 1000 °C annealing matched the crystalline peaks of ZrSiO 4 . This means that the crystalline zirconium dioxide in the structure has been converted into a crystalline silicate phase. The interface states increased to 5.71×10 10 and the number of border traps decreased to 7.18×10 10 cm −2 with the increasing temperature. These results indicate that an excellent ZrSiO4/Si interface has been fabricated. The order of the leakage current varied from 10 −9 Acm −2 to 10 −6 Acm −2 . The MOS capacitor fabricated with the films annealed at 1000 °C shows better behavior in terms of its structural, chemical and electrical properties. Hence, detailed frequency-dependent electrical characteristics were performed for the ZrSiO 4 thin film annealed at 1000 °C. Very slight capacitance variations were observed under the frequency variations. This shows that the density of frequency-dependent charges is very low at the ZrSiO 4 /Si interface. The barrier height of the device varies slightly from 0.776 eV to 0.827 eV under frequency dispersion. Briefly, it is concluded that the devices annealed at 1000 °C exhibit promising electrical characteristics.

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Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

Cited by 12 publications

References 24 publications

Optimization of salt concentration and explanation of two peak percolation in blend solid polymer nanocomposite films

Optimization of salt concentration and explanation of two peak percolation in blend solid polymer nanocomposite films

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors

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Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

Cited by 12 publications

References 24 publications

Optimization of salt concentration and explanation of two peak percolation in blend solid polymer nanocomposite films

Optimization of salt concentration and explanation of two peak percolation in blend solid polymer nanocomposite films

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Thermal phase separation of ZrSiO4thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors

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Thermal phase separation of ZrSiO₄thin films and frequency- dependent electrical characteristics of the Al/ZrSiO₄/p-Si/Al MOS capacitors