Effect of Laser-Plasma X-Ray Irradiation on Crystallization of Amorphous Silicon Film by Excimer Laser Annealing

Matsuo, Naoto; Uejukkoku, Kazuya; Heya, Akira; Amano, Sho; Takanashi, Yasuyuki; Miyamoto, Shuji; Mochizuki, Takayasu

doi:10.1143/jjap.46.l1061

Cited by 24 publications

(20 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The difference in the activation energy between the furnace annealing and the soft X-ray irradiation, namely, 0.12 eV, may be related to the effect of soft X-ray irradiation. We have reported that a crystal-like region, called the quasi-nucleus, is formed by electron excitation and atomic movement with soft X-ray irradiation of amorphous Si [13]- [16]. It seems that the metastable state (crystal-like region) in the damage region introduced by B ion implantation was achieved by soft Xray irradiation.…”

Section: Discussionmentioning

confidence: 99%

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Heya

Matsuo

Kanda

2016

IEICE Trans. Electron.

Self Cite

View full text Add to dashboard Cite

A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400 • C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10 −3 at 110 • C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.

show abstract

Section: Discussionmentioning

confidence: 99%

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Heya

Matsuo

Kanda

2016

IEICE Trans. Electron.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The coating designs are simply G/(ML) 2 /air, G/(ML) 5 M/air, and G/(ML) 20 M/air, for AR, BS and HR coatings, respectively, where M is quarterwave layer Al 2 O 3 , L is quarterwave layer SiO 2 , and G is substrate fused silica (30 mm diameter, 3 mm thickness). The substrates were ultrasonic cleaned under class 1000 clean room conditions.…”

Section: Preparation and Characterization Of Multilayer Coatingsmentioning

confidence: 99%

“…Excimer laser systems have been widely used in many fields, e.g., medical science 1,2) , micromachining 3,4) , laser annealing 5,6) , and deposition of thin film 7,8) . However, many applications suffer from the limited resistance of optical components against intense laser radiation.…”

Section: Introductionmentioning

confidence: 99%

Laser induced damage of multilayer coatings for 248 nm

Yao

Yuan

et al. 2008

The Review of Laser Engineering

View full text Add to dashboard Cite

Antireflection coatings (AR), beam splitter coatings (BS) and high-reflectance coatings (HR) were prepared to study the effect of material properties and stack structures on the laser induced damage behaviors of coatings at a wavelength of 248 nm. All the coatings were deposited on fused silica substrates by electron beam reactive evaporation technique with the materials of aluminum oxide and silicon dioxide. Laser-induced damage thresholds (LIDTs), damage morphologies and profiles of damage sites of multilayer coatings were characterized to investigate the damage mechanism of coatings irradiated by the excimer laser. Besides, the temperature fields were calculated to better understand the damage mechanism with our programmed software. The results indicate that the absorption of defects and the electric field distribution of thin film greatly contribute to LIDTs of thin films.

show abstract

“…Matsuo et al found that laser plasma soft X-ray irradiation before excimer laser annealing (ELA) reduced the critical energy density for the initiation of crystallisation of amorphous silicon films. 5 The results of their study will enable us to realize a low-temperature process for ELA crystallisation. However, an intense, high average-power soft X-ray beam for irradiation is required to realize such application.…”

Section: Introductionmentioning

confidence: 97%

Characteristics of a cylindrical collector mirror for laser-produced xenon plasma soft X-rays and improvement of mirror lifetime by buffer gas

Inoue

Mochizuki

Miyamoto

et al. 2012

Review of Scientific Instruments

Self Cite

View full text Add to dashboard Cite

The focusing characteristics of a ruthenium-coated cylindrical mirror were investigated on the basis of its ability to collect and focus broadband 5-17-nm soft X-rays emitted from a laser-produced plasma. Based on the plasmas spectral intensity distribution and the reflectivity function of the mirror, we defined the optimum position of the integrated cylindrical mirror at which the X-ray energy flux transported and focused through the mirror was maximum. A minimum spot diameter of 22 mm at a distance of approximately 200 mm from a soft X-ray source was confirmed. The maximum intensity of the collected soft X-rays was 1.3 mJ/cm(2) at the center of the irradiation zone. Thus, the irradiation intensity was improved by approximately 27 times when compared to that of 47 μJ/cm(2) without the mirror. The debris sputtering rate on the reflection surface of the mirror can be reduced to 1/110 by argon gas at 11 Pa, while the attenuation rate of the soft X-rays due to absorption by the buffer gas can be suppressed to less than 10% at the focal point. The focusing property of the mirror is expected to be maintained for 3000 h or longer without significant degradation for a 100 W/320 pps laser shot if the ruthenium layer is thicker than 10 μm. These results suggest that a stand-alone broadband soft X-ray processing system can be realized by using laser-produced plasma soft X-rays.

show abstract

Effect of Laser-Plasma X-Ray Irradiation on Crystallization of Amorphous Silicon Film by Excimer Laser Annealing

Cited by 24 publications

References 15 publications

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Laser induced damage of multilayer coatings for 248 nm

Characteristics of a cylindrical collector mirror for laser-produced xenon plasma soft X-rays and improvement of mirror lifetime by buffer gas

Contact Info

Product

Resources

About