Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT

Hu, Shiben; Lu, Kuankuan; Ning, Honglong; Fang, Zhiqiang; Liu, Xianzhe; Xie, Weiguang; Yao, Rihui; Zou, Jianhua; Xu, Miao; Peng, Junbiao

doi:10.1109/led.2018.2800725

Cited by 36 publications

(22 citation statements)

References 19 publications

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“…For this reason, those acidic Cu etchants can damage the IGZO layer and device structure easily and affect the device performance. As a result, most researchers use shadow mask to deposit S/D to avoid wet Cu etchant [20,[26][27][28]. TFTs characteristics are usually presumed from the transfer characteristics, where the drain to source current (I d ) is plotted against gate to source voltage (V g ) for various drain to source voltage (V d ) and from output characteristics, where I d is plotted against drain to source voltage (V d ) for various gate to source voltage (V g ), as shown in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

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Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

et al. 2021

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The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using a non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compared the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibit good electrical properties, as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 × 10−6 A. We patterned all the layers by a photolithography process. Finally, we introduced a SiO2-ESL layer to protect the device from external influence. The results show that the prevention of Cu and the introduced ESL layer enhances the electrical properties of IGZO TFTs.

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Section: Resultsmentioning

confidence: 99%

“…The SS value becomes high because the density of the acceptor-like trap states of IGZO is also increased. Hu et al reported the field effect mobility around 11.5 cm 2 /V-s with ITO barrier layer [27]. On the other hand, Kim et al also reported the field effect mobility around 12.8 cm 2 /V-s with Mo-Ti/Cu S/D [28].…”

Section: Resultsmentioning

confidence: 99%

Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

et al. 2021

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“…Moreover, the carrier concentration can be flexibly tuned, and it has been proved to be good alternative to noble metals [22]. In 2018, ITO thin layer was deposited on top of In-Ga-Zn-O to inhibit the migration and diffusion of copper which improved the performance of transistors [23]. Therefore, ITO layer can not only protect the inner film from damage, but also effectively prevent the diffusion of the metal layer.…”

Section: Introductionmentioning

confidence: 99%

Broadband Absorption Tailoring of SiO2/Cu/ITO Arrays Based on Hybrid Coupled Resonance Mode

et al. 2019

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Sub-wavelength artificial photonic structures can be introduced to tailor and modulate the spectrum of materials, thus expanding the optical applications of these materials. On the basis of SiO2/Cu/ITO arrays, a hybrid coupled resonance (HCR) mechanism, including the epsilon-near-zero (ENZ) mode of ITO, local surface plasmon resonance (LSPR) mode and the microstructural gap resonance (GR) mode, was proposed and researched by systematically regulating the array period and layer thickness. The optical absorptions of the arrays were simulated under different conditions by the finite-difference time-domain (FDTD) method. ITO films were prepared and characterized to verify the existence of ENZ mode and Mie theory was used to describe the LSPR mode. The cross-sectional electric field distribution was analyzed while SiO2/Cu/ITO multilayers were also fabricated, of which absorption was measured and calculated by Macleod simulation to prove the existence of GR and LSPR mode. Finally, the broad-band tailoring of optical absorption peaks from 673 nm to 1873 nm with the intensities from 1.8 to 0.41 was realized, which expands the applications of ITO-based plasmonic metamaterials in the near infrared (NIR) region.

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“…The requirement of low contact resistance between electrode and semiconductor is contributed to achieve high device performance. Traditional electrode materials such as Al, Ti, ITO, Cu, and Mo have been widely used as S/D electrode . Usually, there is an interfacial reaction between oxide thin film and electrodes such as Al, Ti, and Cu, which inevitably influence device performance.…”

Section: Introductionmentioning

confidence: 99%

“…Mo have been widely used as S/D electrode. [11][12][13][14][15][16] Usually, there is an interfacial reaction between oxide thin film and electrodes such as Al, Ti, and Cu, which inevitably influence device performance. As a result of ITO electrode containing large amounts of In, it is not friendly for environment.…”

Section: Introductionmentioning

confidence: 99%

A study of contact properties between molybdenum and amorphous silicon tin oxide thin film transistors

Ning

Liu

et al. 2018

J Soc Info Display

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Amorphous silicon tin oxide (a‐STO) semiconductor is of increasing interest for fabricating thin film transistor. The contact properties of Mo source/drain electrode to a‐STO film subjected to different thermal annealing processes was investigated. The formation of molybdenum oxide interlayer between Mo and a‐STO film annealed in air ambient was confirmed by cross‐sectional transmission electron microscopy image, and the interlayer was formed by getting oxygen from a‐STO film in air annealing process. The formation of molybdenum oxide interlayer could provide not only an adhesive layer but also an intermediate barrier layer, and it hindered Mo atoms diffuse into a‐STO film, which would form a good quality of contact interface and facilitate the electron injection from Mo electrode into a‐STO film.

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Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT

Cited by 36 publications

References 19 publications

Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

Broadband Absorption Tailoring of SiO2/Cu/ITO Arrays Based on Hybrid Coupled Resonance Mode

A study of contact properties between molybdenum and amorphous silicon tin oxide thin film transistors

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