Effect of ITO capping and its deposition parameters on electrical properties of MoO3/Si carrier-selective contact solar cell

First-Principles Study of the Surface Passivation Effect in the Si/MoOx Interface

“…Interestingly, the β-MoO 2.87 /Si:H interface structure with has the lowest concentration of electronic states at E f , suggesting the best passivation on the Si surface. It is also experimentally reported − that TMO-based Si heterostructures with oxygen vacancies give better performance for Si solar cells, which agrees fairly well with our findings.…”

“…Although we have been using stoichiometric MoO 3 in the above discussions, it should be mentioned that under typical growth conditions, only substoichiometric MoO x , 2 ≤ x ≤ 3, is obtained. − To understand the effect of the oxygen deficiency in MoO 3 on the Si-surface slab, we modelled various MoO x /Si surface configurations with a moderate 5% oxygen vacancy (MoO 2.87 ) concentration. We start with two different configurations: Si–O–Si and Si–Si dimer terminations at the interface.…”

“…An ideal strategy would be to use a material which serves both these purposes, effective passivation of the c-Si surface while selectively conducting a specific charge carrier. Si PV devices based on transition-metal oxides (TMOs) are known to fulfil both these criteria and, therefore, have garnered a great deal of interest in recent times. − For example, thin films of substoichiometric tungsten oxide (WO x ), , vanadium oxide (VO x ), − and molybdenum oxide (MoO x ) − have been used as an electron-blocking layer to the silicon absorber because of their wide band gap (3–3.3 eV) and high work function (5–7 eV), resulting in a large conduction band offset. Similarly, TiO 2 acts as a hole-blocking layer due to a large valence-band offset (VBO) and allows only electrons to pass through. , However, the performance of such PV devices is suboptimal. ,− , This is mainly attributed to the interface characteristics (oxygen vacancies, different TMO phases, etc.…”

“…25,26 However, the performance of such PV devices is suboptimal. 16,[18][19][20][21][22][23][24]27 This is mainly attributed to the interface characteristics (oxygen vacancies, different TMO phases, etc. ), which develop under different growth conditions leading to different transport mechanisms.…”

High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells

“…This technique is specially fitting for the SC deposition because it can also be used for the growth of high quality ITO and/or metallic films. Therefore, either transparent conductive or metallic capping layers can be deposited sequentially [5] in the same system, thus minimizing interfacial degradation, which is critical for an efficient photovoltaic cell.…”