Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS

Abstract

We investigated the relationship between ion implantation-induced defects and electrical characteristics, especially focusing on the leak failure rate in SiC IEMOSs and PN diodes. It was found that dislocation exists in each leakage point by analyzing identical leak-failed IEMOS by emission microscopy and refraction X-ray topography. The leak failure rate of the PN diodes and IEMOS was improved with an increase in the ion implantation temperature under the implantation and annealing conditions used in this experiment. It is considered that ion implantation-induced defects lead to an increase in leak failure rates, and also enable a decrease in leak failure rates by raising the implantation temperature up to 600 deg.C.

Ion implanter and Activation Annealing for SiC devices

“…On the other hand, the device electrical properties improvement is reported when implantation temperature is increased to 600deg.C. [2].…”

“…(Red line). The leak failure is normalized with that measured at 1200V using IEMOSs prepared with 500deg.C [2]…”