Effect of interface states on spin-dependent tunneling in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Mg</mml:mi><mml:mi mathvariant="normal">O</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow></mml:math>tunnel junctions

Belashchenko, Kirill D.; Velev, Julian P.; Tsymbal, Evgeny Y.

doi:10.1103/physrevb.72.140404

Cited by 133 publications

(137 citation statements)

References 37 publications

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“…19,21,22 and the same setup with Ref. 23. The details of the calculation such as the chosen k-mesh in the two dimensional Brillouin zone (2DBZ) and the method of calculation for the total current and spin polarization are the same with those used for Fe/GaAs(001) interface and are described in Refs.…”

Section: Resultsmentioning

confidence: 99%

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Theory of electrical spin-detection at a ferromagnet/semiconductor interface

Chantis

Smith

2008

Phys. Rev. B

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We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin polarization. We show that this bias dependence originates from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Numerical results show that the magnitude of the voltage signal can be tuned over a wide range from the second effect which suggests a universal method for enhancing electrical spin-detection sensitivity in ferromagnet/semiconductor tunnel contacts. Using first-principles calculations we examine the particular case of a Fe/GaAs Schottky tunnel barrier and find very good agreement with experiment. We also predict the bias dependence of the voltage signal for a Fe/MgO/GaAs tunnel structure spin detector.

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Section: Resultsmentioning

confidence: 99%

“…It was shown in Ref. 23,24 that the interface minority-spin resonances in Fe/MgO(001) interface are located far from the Γ point in the 2DBZ, contributing much less to the tunneling conductance than they do in the case of Fe/GaAs(001) interface. Therefore as we can see in Fig.…”

Section: Resultsmentioning

confidence: 99%

Theory of electrical spin-detection at a ferromagnet/semiconductor interface

Chantis

Smith

2008

Phys. Rev. B

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“…4,[16][17][18] This is spatially localized at the interface between Fe and MgO and it is resonating at E F . A comparison between the bulk Fe DOS and the DOS for the interface Fe layer ͓Figs.…”

Section: Bias-dependent Transmissionmentioning

confidence: 99%

“…7 This is modeled at a simple level by adding a small imaginary part ␦ to the energy when calculating T͑E ; V͒; i.e., it corresponds to a uniform level broadening. 18 The effects of such addition on the I-V, S͑V͒, and TMR are shown in Fig. 6, while those on T͑E ;0͒ for the AP configuration are shown in Fig.…”

Section: Bias-dependent Current and Tmrmentioning

confidence: 99%

Resonant electronic states andI−Vcurves of Fe/MgO/Fe(100) tunnel junctions

2009

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The bias dependence of the tunnel magnetoresistance ͑TMR͒ of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the nonequilibrium Green's-function method with density-functional theory. At voltages smaller than 20 mV the I-V characteristics and the TMR are dominated by resonant transport through narrow interface states in the minority-spin band. In the parallel configuration this contribution is quenched by a voltage comparable to the energy width of the interface state, whereas it persists at all voltages in the antiparallel configuration. At higher bias the transport is mainly determined by the relative positions of the ⌬ 1 band edges in the two Fe electrodes, which causes a decrease in the TMR.

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“…The importance of interfaces in controlling the tunnelling spin polarization is known from studies of MTJs (e.g. [176][177][178][179][180][181]). In MFTJs with asymmetric interfaces (electrodes), this could lead to electric-field control of TMR.…”

Section: (B) Multi-ferroic Tunnel Junctionsmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

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204

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Effect of interface states on spin-dependent tunneling inFe∕MgO∕Fetunnel junctions

Cited by 133 publications

References 37 publications

Theory of electrical spin-detection at a ferromagnet/semiconductor interface

Theory of electrical spin-detection at a ferromagnet/semiconductor interface

Resonant electronic states andI−Vcurves of Fe/MgO/Fe(100) tunnel junctions

Multi-ferroic and magnetoelectric materials and interfaces

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