Effect of interface on coupling of NiFeCo/TaN/NiFeCo sandwich films

Yeh, T.; Swanson, Douglas L.; Berg, L.; Karn, P.W.

doi:10.1109/20.619520

Cited by 5 publications

(3 citation statements)

References 4 publications

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“…For example, films of tantalum nitride such as TaN and Ta 2 N are used as copper diffusion barriers in microelectronics because of their thermal and chemical stability towards copper. [1][2][3] It has also been reported that the tantalum nitride films are used as an interlayer in magnetic random access memories, 4 thin film resistors 5 and gate electrodes for complementary metal oxide semiconductors. 6 Furthermore, it has been proposed to use tantalum(V) nitride (Ta 3 N 5 ) as a vermilion pigment that does not containin toxic heavy metals.…”

Section: Introductionmentioning

confidence: 99%

The role of electronegativity on the extent of nitridation of group 5 metals as revealed by reactions of tantalum cluster cations with ammonia molecules

Arakawa

Ando

Fujimoto

et al. 2018

Phys. Chem. Chem. Phys.

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Reactions of the free tantalum cation, Ta+, and tantalum cluster cations, Tan+ (n = 2-10), with ammonia are presented. The reaction of the monomer cation, Ta+, with two molecules of NH3 leads to the formation of TaN2H2+ along with release of two H2 molecules. The dehydrogenation occurs until the formal oxidation number of the tantalum atom reaches +5. On the other hand, all the tantalum cluster cations, Tan+, react with two molecules of NH3 and form TanN2+ with the release of three H2 molecules. Further exposure to ammonia showed that TanNmH+ and TanNm+ are produced through successive reactions; a pure nitride and three H2 molecules are formed for every other NH3 molecule. The nitridation occurred until the formal oxidation number of the tantalum atoms reaches +5 as in the case of TaN2H2+ in contrast to other group 5 elements, i.e., vanadium and niobium, which have been reported to produce nitrides with lower oxidation states. The present results on small gas-phase metal-nitride clusters show correlation with their bulk properties: tantalum is known to form bulk nitrides in the oxidation states of either +5 (Ta3N5) or +3 (TaN), whereas vanadium and niobium form nitrides in the oxidation state of +3 (VN and NbN). Along with DFT calculations, these findings reveal that nitridation is driven by the electron-donating ability of group 5 elements, i.e., electronegativity of the metal plays a key role in determining the composition of the metal nitrides.

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Section: Introductionmentioning

confidence: 99%

The role of electronegativity on the extent of nitridation of group 5 metals as revealed by reactions of tantalum cluster cations with ammonia molecules

Arakawa

Ando

Fujimoto

et al. 2018

Phys. Chem. Chem. Phys.

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“…In addition, TaN has been considered as an electrode material for those dynamic random access memory (DRAM) storage capacitors where Ta 2 O 5 is used as a dielectric material . TaN has also been investigated as a nonmagnetic interlayer in NiFeCo/TaN/NiFeCo nonvolatile magnetic random access memories . In addition to microelectronics, TaN films have been also examined for high-temperature ceramic pressure sensors because of their good stability and piezoresistive properties .…”

Section: Introductionmentioning

confidence: 99%

Controlled Growth of TaN, Ta₃N₅, and TaO_xN_y Thin Films by Atomic Layer Deposition

et al. 1999

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TaN, Ta 3 N 5 , and TaO x N y films were deposited by the atomic layer deposition technique.The alternate surface reactions between TaCl 5 and NH 3 resulted in Ta 3 N 5 films, but when elemental zinc, serving as an additional reducing agent, was supplied on the substrates between the TaCl 5 and NH 3 pulses, TaN with a resistivity of 9 × 10 -4 Ω cm was obtained. TaO x N y films were grown by depositing first thin Ta 3 N 5 layers which were then partially oxidized by single water pulses. By varying the number of the Ta 3 N 5 deposition cycles between the water pulses, the oxygen-to-nitrogen ratio of the films was controlled. The permittivity of the TaO x N y films was around 30 which is somewhat higher than that of Ta 2 O 5 .

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“…However, the resistivity of the barrier layer becomes less important as the dimensions of the interconnects are reduced, therefore, Ta 3 N 5 may become advantageous in the future [5]. In addition to its use as a diffusion barrier, TaN x has many other applications, for example, conductive TaN has been investigated as a gate electrode [17][18][19], a work function tuning layer [20], thin film resistors [21], and as a non-magnetic interlayer in non-volatile magnetic random access memory (MRAM) [22]. Ta 3 N 5 has been used in photonic structures, such as inverse opals because of its high refractive index (3) and partial transparency in the visible wavelengths [23].…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine

Fang

Aspinall

Odedra³

et al. 2011

Journal of Crystal Growth

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Effect of interface on coupling of NiFeCo/TaN/NiFeCo sandwich films

Cited by 5 publications

References 4 publications

The role of electronegativity on the extent of nitridation of group 5 metals as revealed by reactions of tantalum cluster cations with ammonia molecules

The role of electronegativity on the extent of nitridation of group 5 metals as revealed by reactions of tantalum cluster cations with ammonia molecules

Controlled Growth of TaN, Ta₃N₅, and TaO_xN_y Thin Films by Atomic Layer Deposition

Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine

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Effect of interface on coupling of NiFeCo/TaN/NiFeCo sandwich films

Cited by 5 publications

References 4 publications

The role of electronegativity on the extent of nitridation of group 5 metals as revealed by reactions of tantalum cluster cations with ammonia molecules

The role of electronegativity on the extent of nitridation of group 5 metals as revealed by reactions of tantalum cluster cations with ammonia molecules

Controlled Growth of TaN, Ta3N5, and TaOxNy Thin Films by Atomic Layer Deposition

Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine

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Controlled Growth of TaN, Ta₃N₅, and TaO_xN_y Thin Films by Atomic Layer Deposition