Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine

Gadolinium nitride films deposited using a PEALD based process

“…In thermal ALD, ammonia (Electronic grade, Air products) and mono methyl hydrazine (MMH) (SAFC-Hitech) were used as co-reactants. Unfortunately even with highly reactive hydrazine [30][31][32], both thermal ALD processes had very low growth rates, similar to the rate of deposition obtained without any co-reactant. The resulting films were found to be Gd 2 O 3 with low densities, which indicate unfavorable reaction thermodynamics between Gd(MeCp) 3 and both thermal co-reactants.…”

“…The energy spectrum of scattered ions was collected with a state of the art toroidal electrostatic energy analyzer with position-sensitive detector aligned to the Si {112} direction, collecting a dose of 10 mC. This configuration allows a 90 o scattering angle, which separates the oxygen and nitrogen peaks most effectively [32]. The composition of the films were estimated from the integrated peak areas using the scattering cross sections and were also modeled using SIMNRA [52].…”

“…For thermal ALD, ammonia is widely used as a co-reactant for the deposition of nitride materials [24,25]; however, hydrazine based co-reactants have a superior reactivity and have also been used [30][31][32]. In PEALD, mixed H 2 /N 2 plasmas have been used for the deposition of TaN x [33,34] and TiN [35][36][37][38] with halide precursors as well as HfN x [39], TaN x [40,41] and TiN [42] with alkylamide precursors.…”

Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting

“…34 The ALD of tantalum nitride using PDMAT and MMH has previously been studied, where an ALD deposition temperature window between 200 and 300 °C was found with a growth rate of ∼0.3 Å per cycle. 35 It has been previously reported that PDMAT suffers from thermal decomposition at temperatures above 300 °C, therefore, to avoid the decomposition of the precursor and ensure an ALD process, 280 °C was used as the maximum deposition temperature. 34,35 Interestingly, while we confirmed an ALD temperature window over 175 to 280 °C, we found a growth rate approximately three times larger with a small temperature dependence.…”

“…35 It has been previously reported that PDMAT suffers from thermal decomposition at temperatures above 300 °C, therefore, to avoid the decomposition of the precursor and ensure an ALD process, 280 °C was used as the maximum deposition temperature. 34,35 Interestingly, while we confirmed an ALD temperature window over 175 to 280 °C, we found a growth rate approximately three times larger with a small temperature dependence. Plots of thickness vs. number of ALD cycles are provided in Fig.…”