Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that results in resonant absorption, scattering, and near field enhancement around the NC can be tuned across a wide optical spectral range from visible to far-infrared by synthetically varying doping level, and post synthetically via chemical oxidation and reduction, photochemical control, and electrochemical control. In this review, we will discuss the fundamental electromagnetic dynamics governing light matter interaction in plasmonic semiconductor NCs and the realization of various distinctive physical properties made possible by the advancement of colloidal synthesis routes to such NCs. Here, we will illustrate how free carrier dielectric properties are induced in various semiconductor materials including metal oxides, metal chalcogenides, metal nitrides, silicon, and other materials. We will highlight the applicability and limitations of the Drude model as applied to semiconductors considering the complex band structures and crystal structures that predominate and quantum effects that emerge at nonclassical sizes. We will also emphasize the impact of dopant hybridization with bands of the host lattice as well as the interplay of shape and crystal structure in determining the LSPR characteristics of semiconductor NCs. To illustrate the discussion regarding both physical and synthetic aspects of LSPR-active NCs, we will focus on metal oxides with substantial consideration also of copper chalcogenide NCs, with select examples drawn from the literature on other doped semiconductor materials. Furthermore, we will discuss the promise that LSPR in doped semiconductor NCs holds for a wide range of applications such as infrared spectroscopy, energy-saving technologies like smart windows and waste heat management, biomedical applications including therapy and imaging, and optical applications like two photon upconversion, enhanced luminesence, and infrared metasurfaces.

Semiconductor electrodes capable of using solar photons to drive water-splitting reactions, such as haematite (α-Fe2O3), have been the subject of tremendous interest over recent decades. The surface has been found to play a significant role in determining the efficiency of water oxidation with haematite; however, previous works have only allowed hypotheses to be formulated regarding the identity of relevant surface species. Here we investigate the water-oxidation reaction on haematite using infrared spectroscopy under photoelectrochemical (PEC) water-oxidation conditions. A potential- and light-dependent absorption peak at 898 cm(-1) is assigned to a Fe(IV)=O group, which is an intermediate in the PEC water-oxidation reaction. These results provide direct evidence of high-valent iron-oxo intermediates as the product of the first hole-transfer reaction on the haematite surface and represent an important step in establishing the mechanism of PEC water oxidation on semiconductor electrodes.

Degenerately doped semiconductor nanocrystals (NCs) exhibit a localized surface plasmon resonance (LSPR) in the infrared range of the electromagnetic spectrum. Unlike metals, semiconductor NCs offer tunable LSPR characteristics enabled by doping, or via electrochemical or photochemical charging. Tuning plasmonic properties through carrier density modulation suggests potential applications in smart optoelectronics, catalysis and sensing. Here, we elucidate fundamental aspects of LSPR modulation through dynamic carrier density tuning in Sn-doped InO (Sn:InO) NCs. Monodisperse Sn:InO NCs with various doping levels and sizes were synthesized and assembled in uniform films. NC films were then charged in an in situ electrochemical cell and the LSPR modulation spectra were monitored. Based on spectral shifts and intensity modulation of the LSPR, combined with optical modelling, it was found that often-neglected semiconductor properties, specifically band structure modification due to doping and surface states, strongly affect LSPR modulation. Fermi level pinning by surface defect states creates a surface depletion layer that alters the LSPR properties; it determines the extent of LSPR frequency modulation, diminishes the expected near-field enhancement, and strongly reduces sensitivity of the LSPR to the surroundings.

Hematite (α-Fe2O3) thin film electrodes prepared by atomic layer deposition (ALD) were employed to photocatalytically oxidize water under 1 sun illumination. It was shown that annealing at 800 °C substantially improves the water oxidation efficiency of the ultrathin film hematite electrodes. The effect of high temperature treatment is shown to remove one of two surface states identified, which reduces recombination and Fermi level pinning. Further modification with Co-Pi water oxidation catalyst resulted in unprecedented photocurrent onset potential of ∼0.6 V versus reversible hydrogen electrode (RHE; slightly positive of the flat band potential).

Uniform thin films of hematite and Ti-doped hematite (a-Fe 2 O 3 ) were deposited on transparent conductive substrates using atomic layer deposition (ALD). ALD's epitaxial growth mechanism allowed the control of the morphology and thickness of the hematite films as well as the concentration and distribution of Ti atoms. The photoelectrochemical performances of Ti-doped and undoped hematite electrodes were examined and compared under water oxidation conditions. The incorporation of Ti atoms into hematite electrodes was found to dramatically enhance the water oxidation performance, with much greater enhancement found for the thinnest films. An optimum concentration $3 atomic% of Ti atoms was also determined. A series of electrochemical, photoelectrochemical and impedance spectroscopy measurements were employed to elucidate the cause of the improved photoactivity of the Ti-doped hematite thin films. This performance enhancement was a combination of improved bulk properties (hole collection length) and surface properties (water oxidation efficiency). The improvement in both bulk and surface properties is attributed to the resurrection of a dead layer by the Ti dopant atoms. Broader contextSolar energy to fuel conversion through photoelectrochemical (PEC) water oxidation at semiconductors is a promising approach to supply renewable and clean energy. Hematite (a-Fe 2 O 3 ) is one of the most studied semiconductor materials for solar hydrogen production via PEC water splitting due to its suitable combination of visible light absorption, favorable band gap positions, stability in aqueous solutions and abundance. A short charge collection length, however, has thus far prevented efficient water oxidation with hematite. Nanostructuring the electrode to minimize the charge collection distance has produced promising results, but just changing the dimensions has proven insufficient. The incorporation of a large concentration of impurity atoms, doping, has also led to improved performance, however the specic cause has not been unambiguously determined. It is vital to understand the fundamental physical effect of such dopant atoms in order to fully exploit this promising strategy. In this work, uniform thin lm Ti-doped hematite electrodes were made by atomic layer deposition (ALD) and examined by employing photoelectrochemical and impedance spectroscopic measurements under PEC water oxidation conditions; the cause of the improved performance is discussed.

Amorphous transition metal oxides are recognized as leading candidates for electrochromic window coatings that can dynamically modulate solar irradiation and improve building energy efficiency. However, their thin films are normally prepared by energy-intensive sputtering techniques or high-temperature solution methods, which increase manufacturing cost and complexity. Here, we report on a room-temperature solution process to fabricate electrochromic films of niobium oxide glass (NbO) and 'nanocrystal-in-glass' composites (that is, tin-doped indium oxide (ITO) nanocrystals embedded in NbO glass) via acid-catalysed condensation of polyniobate clusters. A combination of X-ray scattering and spectroscopic characterization with complementary simulations reveals that this strategy leads to a unique one-dimensional chain-like NbO structure, which significantly enhances the electrochromic performance, compared to a typical three-dimensional NbO network obtained from conventional high-temperature thermal processing. In addition, we show how self-assembled ITO-in-NbO composite films can be successfully integrated into high-performance flexible electrochromic devices.

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This review describes the potential of hematite as a photoanode material for photoelectrochemical (PEC) water splitting. The current understanding of key loss-mechanisms of hematite are introduced and correlated to performance enhancement strategies. The significant voltage loss associated with overcoming the competitive water oxidation and surface state recombination has recently been surmounted through a combination of high temperature annealing and surface modification with water oxidation catalysts. Substantial efforts have been made at nanostructuring electrodes to increase the charge separation efficiency without sacrificing light absorption. Even in optimized nanostructured electrodes, however, charge separation continues to be the primary barrier to achieving efficient water splitting with hematite. Specifically, significant depletion region recombination results in voltage dependant photocurrent which constrains the fill factor. Thus, future directions to enhance the efficiency of hematite electrodes are discussed with an emphasis on circumventing depletion region recombination.