Effect of interface defects on high efficient perovskite solar cells

Izadi, Farhad; Ghobadi, Arash; Gharaati, Abdolrasoul; Minbashi, Mehran; Hajjiah, Ali

doi:10.1016/j.ijleo.2020.166061

Cited by 50 publications

(23 citation statements)

References 19 publications

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“…Interface defects contribute significantly to the nonradiative recombination of the interface. The interface between the transport and perovskite layers determines whether the photogenerated carriers can be smoothly transferred from the light-absorption layer to the n/p-type semiconductor [ 13 , 29 , 36 , 37 ]. The recombination of charges at the interface severely restricts the photovoltaic performance of PSCs.…”

Section: Psc Interfacementioning

confidence: 99%

“…When materials of different functional layers are in contact with each other to form an interface, energy level bending and a charge transfer may occur, causing the vacuum energy level to no longer be leveled, which affects the energy level matching at the interface. The energy level arrangement is affected by several factors, such as the energy level position of the adjacent interface material, interface defects, ion migration, interface instability, and preparation conditions of the adjacent interface layer [ 10 , 29 , 43 ]. The introduction of the interface materials into the perovskite interface can significantly affect the interface band arrangement and interface carrier dynamics, thereby increasing the open-circuit voltage or effective carrier injection.…”

Section: Psc Interfacementioning

confidence: 99%

“…The main causes of an interface nonradiative recombination loss are the interface defects, imperfect energy level arrangements, and interface reactions. The bulk defects of most perovskite films are shallow point defects, whereas most of the defects at the interface are deep-level and high-latitude defects (such as surface defects, grain boundary defects, and precipitated phase defects) [ 28 , 29 , 50 , 51 , 52 ].…”

Section: Psc Interfacementioning

confidence: 99%

“…Many studies have proven that the efficiency and stability of perovskite solar cells are closely associated with the nonradiative recombination loss of bulk and interface carriers [ 28 ]. Effective methods for the further development of PSCs include optimizing their structure, improving the charge separation and extraction rate at the interface, and reducing the effect of the organic material degradation on the device stability [ 15 , 29 ]. The interface engineering of PSCs is discussed herein, primarily in terms of the effect of the light-absorbing layer on the interface and interface materials that can be inserted into the perovskite layer.…”

Section: Introductionmentioning

confidence: 99%

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Review of Interface Passivation of Perovskite Layer

Wang

Liu

et al. 2021

Nanomaterials

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Perovskite solar cells (PSCs) are the most promising substitute for silicon-based solar cells. However, their power conversion efficiency and stability must be improved. The recombination probability of the photogenerated carriers at each interface in a PSC is much greater than that of the bulk phase. The interface of a perovskite polycrystalline film is considered to be a defect-rich area, which is the main factor limiting the efficiency of a PSC. This review introduces and summarizes practical interface engineering techniques for improving the efficiency and stability of organic–inorganic lead halide PSCs. First, the effect of defects at the interface of the PSCs, the energy level alignment, and the chemical reactions on the efficiency of a PSC are summarized. Subsequently, the latest developments pertaining to a modification of the perovskite layers with different materials are discussed. Finally, the prospect of achieving an efficient PSC with long-term stability through the use of interface engineering is presented.

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Section: Psc Interfacementioning

confidence: 99%

Section: Psc Interfacementioning

confidence: 99%

Section: Psc Interfacementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Review of Interface Passivation of Perovskite Layer

Wang

Liu

et al. 2021

Nanomaterials

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“…Urbanization and rapid growth in industrialization extensively bring significant increments in environmental pollution and global warming, which are vital issues alongside the energy crisis that oblige scientists to seek a suitable alternative energy source to rescue the earth and the environment. Thin-film photovoltaic (PV) solar cell technology has grasped global attention among researchers due to its outstanding promises for renewable energy resources and substitution with fossil fuels to meet human energy needs 1 – 12 . Global efforts have been devoted to select (1) non-toxic, (2) air-stabile, and (3) environmentally friendly earth-abundant compositions to manufacture highly efficient thin-film solar cells 13 – 17 .…”

Section: Introductionmentioning

confidence: 99%

A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

Hashemi

Minbashi

Ghorashi

et al. 2021

Sci Rep

Self Cite

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This study represents the investigation of In2S3 thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level, flat band potential, and semiconductor type, the Mott–Schottky analysis has been used. UV–VIS, XRD, and FESEM have been applied to investigate the optical properties of the layers and the layer’s morphologies. The experimental CBT(S, Se) solar cell has been simulated and validated as the next step. After that, the In2S3 layer has been used as the electron transport layer. The results represent that the In2S3 layer is a suitable substitution for toxic CdS. Finally, the In2S3 properties are varied in reasonable ranges, which means different electron transport layers are screened.

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A Theoretical Investigation of Transport Layer‐Free Homojunction Perovskite Solar Cells via a Detailed Photoelectric Simulation

Zhang

Yang

et al. 2023

Advanced Energy Materials

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recently received a new world record efficiency of 25.7%, approaching that of the mainstream crystalline silicon (c-Si) SCs (26.7%). [8] However, the full potential of this type of perovskite device especially in the photovoltaic (PV) industry has not yet been realized, which needs to rely on ongoing progresses to further boost the device efficiency while maintaining/lowering the manufacturing costs with the purpose of accelerating their industrialization process and enhancing their competitiveness in the PV community. In terms of the conventional n-i-p (or p-i-n) sandwich PSCs, device efficiency depends on the electron/hole transport layers (ETLs/ HTLs) to offer a driving force for chargecarrier transport and extraction. [9] Even though a large number of ETLs and HTLs, such as TiO 2 , SnO 2 , and Spiro-OMeTAD, have been widely developed to construct the high-efficient PSCs, complex synthesis/deposition processes together with strict requirements for the preparation conditions pose a challenging to obtain the low-cost perovskite devices, which thus appeals for the structural innovations to simplify the device designs. [10][11][12] Inspired by the high-efficient c-Si solar cells, which usually fabricate a heavily doped p-type (or n-type) emitter on an n-type (or p-type) c-Si substrate to form a p + /n (or n + /p) homojunction, researchers have made many attempts to construct the self-doping perovskite by means of regulating perovskite component and annealing engineering, thus offering a chance to fabricate p-n homojunction/heterojunction PSCs. [13][14][15] The homojunction design has been considered to be a feasible strategy for the perovskite devices, which has been confirmed by a large number of simulations (Table S1, Supporting Information) and experiments. For instance, Cui et al. reported a FA 0.15 MA 0.85 PbI 3 homojunction PSC formed by a solutionprocessed n-type perovskite covered by a thermally evaporated p-type perovskite, which received an outstanding efficiency of 21.38%. Moreover, the continuous success of the perovskite self-doping technology also makes it possible for PSCs to access high efficiency even if transport layers (TLs) are absent. In terms of the TL-free PSCs, the built-in potential formed by the perovskite homojunction/heterojunction provides the devices with a driving force to address the processes of charge-carrier Although the conventional n-i-p or p-i-n perovskite solar cells (PSCs) can produce ultrahigh efficiency (>25%), complex synthesis/deposition processes together with strict requirements for preparing the hole-and electrontransport layers (HTLs and ETLs) pose a challenge to accessing low-cost perovskite devices. To address this issue, a simple strategy of employing a self-doped perovskite homojunction to replace the HTLs and ETLs has been widely proposed. However, this type of TL-free homojunction PSCs is usually endowed with poor efficiency. Here, the design principles and working mechanisms of the TL-free homojunction PSCs are clarified via a rigorous photoelectric simulation...

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Effect of interface defects on high efficient perovskite solar cells

Cited by 50 publications

References 19 publications

Review of Interface Passivation of Perovskite Layer

Review of Interface Passivation of Perovskite Layer

A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

A Theoretical Investigation of Transport Layer‐Free Homojunction Perovskite Solar Cells via a Detailed Photoelectric Simulation

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