Effect of inert components (Y2O3, Al2O3, and Ga2O3) on the chemistimulating effect of the Sb2O3 activator of GaAs thermal oxidation

Penskoi, P. K.; Kostryukov, V. F.; Kutsev, S. V.; Кузнецова, И. В.; Pshestanchik, V. R.; Mittova, I. Ya.

doi:10.1134/s0036023609100118

Cited by 4 publications

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“…The thickness of the films grown on the GaAs surface ranged from 170 nm to 480 nm and increased with increasing chemostimulator content (Sb 2 O 3 ) in the original composition. The inertness of Y 2 O 3 has been proven in previous works [17]. The comparison of the thickness of the obtained films with intrinsic oxidation [18], under the same oxidation conditions, revealed an acceleration in film growth by 3-6 times.…”

Section: Resultssupporting

confidence: 56%

Thin Films on the Surface of GaAs, Obtained by Chemically Stimulated Thermal Oxidation, as Materials for Gas Sensors

et al. 2022

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Semiconductor metal oxide films on the surface of gallium arsenide are obtained by chemostimulated oxidation under the influence of a Sb2O3 + Y2O3 composition. The chemical composition of the obtained films and the surface morphology are determined by EPXMA, IR spectroscopy, and AFM. The main components of the films are gallium and arsenic, which are in the oxidized state. The content of the chemical stimulator (Sb2O3) does not exceed 2%. Films obtained under the influence of composites 60% Sb2O3 + 40% Y2O3 and 80% Sb2O3 + 20% Y2O3 are characterized by the maximum surface roughness. The samples obtained in this work demonstrate n-type semiconductor properties in the temperature range of 20–400 °C. It is established that the obtained samples have a gas-sensitive response to NH3 and CO. The maximum value of the sensory signal appears for the samples obtained under the influence of compositions 80% Sb2O3 + 20% Y2O3, which are characterized by the most developed surfaces. The resulting films are selective to the studied gases—the difference in temperature for the maximum signal is 60 °C (200 °C for CO and 260 °C for NH3).

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Section: Resultssupporting

confidence: 56%

Thin Films on the Surface of GaAs, Obtained by Chemically Stimulated Thermal Oxidation, as Materials for Gas Sensors

et al. 2022

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“…Antimony(III) oxide is one of the most active chemical stimulators and, during film growth on GaAs under the action of this stimulator, a consid erable amount of Sb 2 O 3 (up to 3%) is incorporated into the growing oxide layer [8]. The observed spectra of sample 4 are presented in Fig.…”

Section: Spectral Ellipsometry Study Of Thin Films Grown On Gaas By Cmentioning

confidence: 99%

Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation

et al. 2014

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Microstructural Characteristics of Y2O3-MgO Composite Coatings Deposited by Suspension Plasma Spray

et al. 2012

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Effect of inert components (Y2O3, Al2O3, and Ga2O3) on the chemistimulating effect of the Sb2O3 activator of GaAs thermal oxidation

Cited by 4 publications

References 2 publications

Thin Films on the Surface of GaAs, Obtained by Chemically Stimulated Thermal Oxidation, as Materials for Gas Sensors

Thin Films on the Surface of GaAs, Obtained by Chemically Stimulated Thermal Oxidation, as Materials for Gas Sensors

Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation

Microstructural Characteristics of Y2O3-MgO Composite Coatings Deposited by Suspension Plasma Spray

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