Effect of indium doping in CdO thin films prepared by spray pyrolysis technique

Kumaravel, R.; Ramamurthi, K.; Krishnakumar, V.

doi:10.1016/j.jpcs.2010.07.021

Cited by 81 publications

(22 citation statements)

References 36 publications

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“…This result may be taken to indicates that indium doping level of 6wt% is optimum for preparing the CdO:In thin films. The minimum resistivity of 5.92×10 -4 Ωcm obtained from the present study is in the range of values reported by other investigators[1][2][3] for CdO:In films. The figure shows that the carrier concentration of the CdO films increases and the mobility decreases as the indium doping concentration increases upto 6wt%.…”

supporting

confidence: 86%

Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films

Rajammal¹,

Savarimuthu²,

Arumugam³

2014

AIP Conference Proceedings

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Articles you may be interested inTemperature dependent structural and optical properties of Sol-gel spin coated CdO thin films AIP Conf.Tin doped indium oxide transparent conducting thin films containing silver nanoparticles by sol-gel technique Appl. Phys. Lett. 87, 251922 (2005); 10.1063/1.2149223Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method Abstract. The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10 -4 Ω cm and a maximum carrier concentration of 1.20×10 20 cm -3 have been realized.

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supporting

confidence: 86%

Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films

Rajammal¹,

Savarimuthu²,

Arumugam³

2014

AIP Conference Proceedings

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“…Table 2 shows the electrical properties of the pulsed arc-grown ICO films compared to values reported for several other growth techniques. Except for the optimized PLD-grown films [19], the electrical properties of films prepared by PFCAD in this study are typically better than those of ICO films prepared by other techniques on glass or even on single crystalline MgO substrates [10,12,14,30,[33][34][35][36]. Though the as-deposited films in this study show a little higher resistivity than that of the optimized PLD-grown films, comparable mobility with a higher near infrared transmittance and a much wider transparent range are observed, which is of special interest to multi-junction solar cells.…”

Section: Discussionmentioning

confidence: 83%

“…It is known that the optical absorption edge can be considerably widened via a Burstein-Moss shift by increasing the electron concentration [8,9]. Therefore, various dopants, including indium (In), tin (Sn), titanium (Ti), zinc (Zn), aluminum (Al), and fluorine (F), have been introduced into CdO to simultaneously increase the conductivity and widen the bandgap [10][11][12][13][14][15][16][17][18]. Among these doping elements, indium has been investigated in CdO since the two elements have very close ionic radii and both show excellent photoelectric properties [15,19].…”

Section: Introductionmentioning

confidence: 99%

Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

Zhu

Mendelsberg

Zhu

et al. 2013

Applied Surface Science

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Title AbstractIndium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein-Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23×10 -5 Ωcm, high electron mobility of 142 cm 2 /Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum. Keywords:In doped cadmium oxide; pulsed filtered cathodic arc deposition; transparent conductors IntroductionTransparent conducting oxides (TCOs) have attracted much attention due to their tremendous importance in optical and electrical applications such as displays, touch-screens, thin film solar cell technology and for transparent conducting electrodes in general [1,2]. For solar cell applications, high mobility TCO contacts with a sheet resistance of <10 Ω/□ and an optical transmission >80% over the visible to near infrared wavelengths (bandgap >3 eV) can enhance the efficiency [3]. This is particularly effective for multi-junction solar cells which consist of different semiconductor stacks with appropriately matched bandgaps that are tuned to increase the spectral response over the entire solar spectrum [4]. Therefore, in addition to maintaining high conductivity, improving the visible to near infrared transparency of TCO films is of great importance for applications in high performance multi-junction solar cells.

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“…Many research groups have used wide band-gap semiconductors with excellent transparency in the visible region [7][8][9][10][11][12][13][14][15][16][17][18]. They have offered transparent electronics technology.…”

Section: Introductionmentioning

confidence: 99%