Effect of indium and antimony doping in SnS single crystals

Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

doi:10.1016/j.materresbull.2014.12.013

Cited by 76 publications

(28 citation statements)

References 25 publications

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“…32 In other work the resistivity of Sb-doped SnS was observed to decrease 4 orders of magnitude relative to the undoped SnS. 30 Similar decreases in resistivity were observed with other dopants such as In and Ag 21,27 so the interplay between the dopant location, chemical form, and concentration is clearly a determining factor. From a theoretical point of view the electronic structure of SnS can be well described using modern quantum chemical methods.…”

Section: ■ Introductionmentioning

confidence: 63%

“…21 The increase in cathodic current seen in previous work following In doping was believed to be due to impurity level formation above the valence band which enhanced charge carrier transfer for the In-doped SnS. 21 Increasing the amount of In in the precursor solution further decreased cathodic photocurrent. This is most likely because of the formation of additional In compounds, which lead to decreased efficiency of the film for photoelectrochemical reactions.…”

Section: Undoped and Sb And In Doped Sns Physicochemical Characteriza...mentioning

confidence: 95%

“…Symptomatically with the other metal sulfides, SnS efficiency is thought to be limited by charge carrier recombination at the grain boundaries and sulfur vacancies. 26 To improve efficiency, SnS doped with Ag, 27,28 Bi, 29 Sb, 21,30−32 Cu, 33,34 and In 21,30,35 as well as Al-doped SnS 36 for solar cell applications have been investigated. Sb-doped SnS has been deposited using an atomic layer deposition for developing an n-type SnS material necessary for p−n SnS homojunctions in an attempt to lower recombination losses at the n−p interface, resulting in higher efficiencies of the solar cell.…”

Section: ■ Introductionmentioning

confidence: 99%

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Electrochemically Deposited Sb and In Doped Tin Sulfide (SnS) Photoelectrodes

et al. 2015

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Semiconducting tin sulfide (SnS) was deposited electrochemically from electrolytes containing Sn and S precursors and conditions optimized to maximize its performance as a photoelectrode. Films composed of primarily orthorhombic SnS were electrodeposited on titanium substrates from electrolyte containing 20 mM SnSO 4 and 100 mM Na 2 S 2 O 3 at pH 2.5. For deposition a cathodic pulse of −1.25 V vs Ag/AgCl was applied for 2.75 s followed by a 0.25 s pulse of +0.25 V vs Ag/AgCl repeated for 30−45 min. The films were annealed in argon at 300°C for 3 h. The addition of SbCl 3 (<5%) to the electrolyte gave rise to doping of the SnS film with Sb which resulted in an increase in the photocurrent as well as a switch from p-to n-type semiconducting behavior in an acidified Na 2 S 2 O 3 electrolyte. Incorporation of p-type In into the films from addition of In(NO 3 ) 3 had a smaller effect on the measured photocurrent, and at higher precursor concentration (>5%) the dopants resulted in the formation of secondary phases of Sb and In oxides with reduction in the measured photocurrent. This doped SnS material could potentially be used in systems for the photoelectrochemical production of hydrogen and oxidation of organic wastewater. Density functional theory calculations supported the experimentally observed conductivity increase for photoelectrons as an Sb dopant induced curvature of the valence band. These calculations also provided an explanation to the previous experimental work where Sb doping was used to decrease the resistivity of SnS films. The combination of an automated electrodeposition of an earth abundant metal sulfide with the theoretical calculations to guide the synthesis is an exemplar of how to improve the efficiency of SnS-based solar energy conversion materials. ■ INTRODUCTIONThe economical capture and conversion of solar photons requires materials and structures that are inexpensive and efficient at converting solar photons to electricity or solar fuels. 1,2 A wide range of semiconducting materials, including metal oxides, phosphides, selenides, sulfides, tellurides, and amorphous and crystalline silicon, have been investigated with varying degrees of success. 3 When considering semiconductor materials for a direct solar energy harvesting, two important criteria are (1) the potential for high solar-to-electrical or solar-to-hydrogen conversion efficiency and (2) earth abundance and cost in bulk quantities of the corresponding material components. 3 In addition, it is desired to synthesize these materials using inexpensive and scalable techniques, such as electrodeposition.Certain metal sulfides satisfy both criteria as they have high theoretical solar energy conversion efficiencies (∼24%) and are present in large numbers of minerals. 4 Sulfide-based compound semiconductors have long been the subject of investigation for electronic and optical applications, including FeS 2 , Cu 2 S, Cu 2 ZnSnS 4 (CZTS), RuS 2 , and CuInS 2 . 5−7 Several of these, such as FeS 2 , Cu 2 S, Co, and Cu 2 ZnSnS 4 (CZTS), are comp...

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Section: ■ Introductionmentioning

confidence: 63%

Section: Undoped and Sb And In Doped Sns Physicochemical Characteriza...mentioning

confidence: 95%

Section: ■ Introductionmentioning

confidence: 99%

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Electrochemically Deposited Sb and In Doped Tin Sulfide (SnS) Photoelectrodes

et al. 2015

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“…Unfortunately, peak zT > 0.6 has not yet been realized experimentally so far in either single- or polycrystalline SnS. − This is due to the low carrier concentrations achievable. It is known that both power factor (PF = S 2 /ρ) and zT can only be maximized in a certain narrow energy range of Fermi level for thermoelectrics, , which corresponds to a certain carrier concentration range.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of SnS with Na-Doping

Zhou

et al. 2017

ACS Appl. Mater. Interfaces

139

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Tin sulfide (SnS), a low-cost compound from the IV-VI semiconductors, has attracted particular attention due to its great potential for large-scale thermoelectric applications. However, pristine SnS shows a low carrier concentration, which leads to a low thermoelectric performance. In this work, sodium is utilized to substitute Sn to increase the hole concentration and consequently improve the thermoelectric power factor. The resultant Hall carrier concentration up to ∼10 cm is the highest concentration reported so far for this compound. This further leads to the highest thermoelectric figure of merit, zT of 0.65, reported so far in polycrystalline SnS. The temperature-dependent Hall mobility shows a transition of carrier-scattering source from a grain boundary potential below 400 K to acoustic phonons at higher temperatures. The electronic transport properties can be well understood by a single parabolic band (SPB) model, enabling a quantitative guidance for maximizing the thermoelectric power factor. Using the experimental lattice thermal conductivity, a maximal zT of 0.8 at 850 K is expected when the carrier concentration is further increased to ∼1 × 10 cm, according to the SPB model. This work not only demonstrates SnS as a promising low-cost thermoelectric material but also details the material parameters that fundamentally determine the thermoelectric properties.

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“…However, introducing an intermediate band to the material could enable the additional absorption of low energy photons and lower the losses due to thermalization. Here we prepared V-doped SnS thin films by spray pyrolysis [14] [15] and studied their basic electrical and optical properties.…”

Section: Accepted Manuscript Introductionmentioning

confidence: 99%

Study of the effect of V-doping on the opto-electrical properties of spray-pyrolized SnS thin films

et al. 2018

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SnS is an earth-abundant material that is a potentially suitable candidate for the absorber layer in solar cells. Here spray-pyrolized SnS thin films doped with vanadium were studied using structural and opto-electrical methods. The thin films have an orthorhombic structure with a preferential (111) crystallographic direction. SnS has an indirect bandgap of around 1.05 eV, whereas doping with vanadium changes the band edge and shifts the absorption threshold to around 1.2 eV. The photoluminescence study revealed a broad peak related to the band-to-band transition of energy at around 1.2 eV and an additional sharp peak positioned at 1.17 eV related to vanadium. Additionally, a non-radiative recombination mechanism followed by hopping through band fluctuation barriers has been proposed for photoluminescence quenching at increased temperatures. The conductivity measurements reveal that conductivity weakly increases with V-doping, whereas its activation energy decreases from around 0.38 eV to 0.35 eV.

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Effect of indium and antimony doping in SnS single crystals

Cited by 76 publications

References 25 publications

Electrochemically Deposited Sb and In Doped Tin Sulfide (SnS) Photoelectrodes

Electrochemically Deposited Sb and In Doped Tin Sulfide (SnS) Photoelectrodes

Thermoelectric Properties of SnS with Na-Doping

Study of the effect of V-doping on the opto-electrical properties of spray-pyrolized SnS thin films

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