Effect of in on the properties of AlSb thin film solar cell

Athab, Rana H.; Hussein, Bushra H.; Makki, Sameer A.

doi:10.1063/1.5116957

Cited by 10 publications

(5 citation statements)

References 13 publications

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“…AFM have been used to estimate grain size, surface roughness and topography of the surface for thin films [31]. To determine the optical properties of films prepared, transmission spectrum in the range between 400 to 1100 nm has been recorded, Tauc equation and lambert law have been used to calculated the energy band gap (Eg opt ) and the absorption coefficient respectively from optical absorption spectrum [32,33]. Carrier concentrations, type conductivity, resistivity and Hall mobility were calculated from Hall Effect using Van der Pauw Ecopia-HMS -3000.…”

Section: Methodsmentioning

confidence: 99%

Influence of Cu Dopant on SnS Thin Films Characterization and Enhance Efficiency of p-SnS:Cu /n-Si Solar Cell

Hassun

Hussein

Al-Maiyaly

et al. 2021

KEM

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Thin films Tin sulfide SnS pure and doped with different ratios of Cu (X=0, 0.01, 0.03 and 0.05) were prepared using thermal evaporation with a vacuum of 4*10-6 mbar on two types of substrates n-type Si and glass with (500) nm thickness for solar cell application. X-ray diffraction and AFM analysis were carried out to explain the influence of Cu ratio dopant on structural and morphological properties respectively. SnS phase appeared forming orthorhombic structure with preferred orientation (111), increase the crystallinity degree and surface roughness with increase Cu ratio. UV/Visible measurement revealed the decrease in energy gap from 1.9eV for pure SnS to 1.5 for SnS: Cu (0.05) making these samples suitable for photovoltaic application. On the other hand, Hall Effect indicated the high percentage of Cu increased carrier concentration and mobility. Current-voltage characteristics of p-SnS: Cu / n-Si demonstrate good photovoltaic effect as ratios of Cu increased and the contact parameters which obtained from these measurement show good dependence on doping concentration. In addition, 0.05 of Cu doping was an optimum level of concentration doping increase the efficiency of SnS: Cu /Si solar cell to 3.5%.

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Section: Methodsmentioning

confidence: 99%

Influence of Cu Dopant on SnS Thin Films Characterization and Enhance Efficiency of p-SnS:Cu /n-Si Solar Cell

Hassun

Hussein

Al-Maiyaly

et al. 2021

KEM

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“…When the wavelengths lower than 800 nm the transmittance decreasing this mean high absorption for CuO and CuO:Al in the visible range because the electronic transition between the valance and conduction Band [16]. The highest values of absorbance of CuO:Al at high ratios (3%) Tauc equation [17,19] used to calculate band gap of CuO and CuO:Al samples, the band gap energy is estimated from and the absorption coefficient by lambert law [20]. The valued energy gap for undoped CuO is 1.5 eV and for 1%, 2% and 3%, Al doped CuO is 1.4, 1.3 and 1.2 eV.…”

Section: Resultsmentioning

confidence: 98%

“…UV/Visible 1800 spectrophotometer used to study the optical properties for films deposited on glass substrates from (300-1100) nm. The effect of Al concentration on energy gap value Eg has been calculated from Tauc formula [17,18].…”

Section: Methodsmentioning

confidence: 99%

GROWTH AND OPTOELECTRONIC PROPERTIES OF p-CuO:Al/n-Si HETEROJUNCTION

Al-Maiyaly¹,

Hussein²,

Hassun³

2020

JOR

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A thin films of CuO and CuO:Al as well as p-CuO:Al/n-Si heterojunction with different Al ratios (0,1,2,3)%wt has been successfully fabricated by thermal oxidation with exist oxygen. The energy gap for thin films was calculated from optical properties. The capacitance was calculated as a function of voltage at reverse bias, and it demonstrate that these heterojunctions are abrupt. The capacitance values decreases with increasing the reverse bias while it increases with increasing Al ratio. The results indicated that the width of depletion layers and highest built in potential values decreases as Al concentration increases. The difference between reverse and forward current with applied voltage confirm for p -Cu O /n-Si and p -CuO:Al/n-Si that the heterojunction have a high rectification characteristic.

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“…X-ray diffraction was utilized to analyze the structure composition of those film by assessing 2Ө within the range of 20° to 80° by a 0.05° interval. The formula of Scherer's was applied to compute the size of crystalline for the samples [25][26][27]. Atomic force microscopy revealed that the morphology of surface, roughness & Grain Size was influenced by the 0.2 ratio of S content and the annealing temperature.…”

Section: Methodsmentioning

confidence: 99%

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Hussein,

Hassun,

Al-Maiyaly

et al. 2024

J. Phys.: Conf. Ser.

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Ternary Silver Indium selenide Sulfur AgInSe1.8S0.2 in pure form and with a 0.2 ratio of Sulfur were fabricated via thermal evaporation under vacuum 3*10-6 torr on glasses substrates with a thickness of (550) nm. These films were investigated to understand their structural, optical, and Hall Characteristics. X-ray diffraction analysis was employed to examine the impact of varying Sulfur ratios on the structural properties. The results revealed that the AgInSe1.8S0.2 thin films in their pure form and with a 0.2 Sulfur ratio, both at room temperature and after annealing at 500 K, exhibited a polycrystalline nature with a tetragonal structure and a predominant orientation along the (112) plane, indicating an enhanced degree of crystallinity. The Atomic Force Microscopy (AFM) was utilized to explore how Sulfur affects roughness of surfaces and sampls Grain Size. Furthermore, optical parameters, such as the optical gap and absorption coefficient, were calculated to assess the influence of Sulfur on the optical properties of the AgInSe1.8S0.2 thin films. The UV/Visible measurements indicated a reduction in the energy band gap to 1.78 eV for AgInSe1.8S0.2 at 500 K, making these films potentially suitable for photovoltaic applications. These thin films exhibited donor characteristics, with an increase in electron concentration observed with higher Sulfur content and annealing temperature.

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Effect of in on the properties of AlSb thin film solar cell

Cited by 10 publications

References 13 publications

Influence of Cu Dopant on SnS Thin Films Characterization and Enhance Efficiency of p-SnS:Cu /n-Si Solar Cell

Influence of Cu Dopant on SnS Thin Films Characterization and Enhance Efficiency of p-SnS:Cu /n-Si Solar Cell

GROWTH AND OPTOELECTRONIC PROPERTIES OF p-CuO:Al/n-Si HETEROJUNCTION

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

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Effect of in on the properties of AlSb thin film solar cell

Cited by 10 publications

References 13 publications

Influence of Cu Dopant on SnS Thin Films Characterization and Enhance Efficiency of p-SnS:Cu /n-Si Solar Cell

Influence of Cu Dopant on SnS Thin Films Characterization and Enhance Efficiency of p-SnS:Cu /n-Si Solar Cell

GROWTH AND OPTOELECTRONIC PROPERTIES OF p-CuO:Al/n-Si HETEROJUNCTION

Effect of Sulfur on Characterization of AgInSe1.8S0.2 Thin Film and n-AgInSe1.8S0.2 / p-Si Solar Cell

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Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell