2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) 2019
DOI: 10.1109/irmmw-thz.2019.8873938
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Effect of idler terminations on the conversion loss for THz Schottky diode harmonic mixers

Abstract: Efficient and reliable frequency converters, preferably operating at room temperature, are critical components for frequency-stabilizing terahertz sources. In this work, we present the analysis of optimum configurations for Schottky diode based x4, x6, and x8 harmonic mixers operating at 2.3 THz, 3.5 THz, and 4.7 THz respectively. Detailed large-signal analysis of the two basic single-ended Z-and Y-mixers was carried out using a standard Schottkydiode model. For each case, the conversion loss was minimized by … Show more

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Cited by 8 publications
(3 citation statements)
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“…The embedding impedances of a Schottky diode with a sub-micron anode area were evaluated using a large-signal, harmonic-balance simulation. Using the built-in optimizer in the circuit simulator, the diode-embedding impedances at the RF, IF, and LO frequency were varied to provide a low mixer conversion loss L. The out-of-band frequencies were terminated by an open circuit (Z-mixer topology) [22], [23]. The RF optimum diode-embedding impedance of the Z-mixer is approximately Z RF = (60 + j80) Ω as shown in Fig.…”
Section: B Design Of the ×6-harmonic Mixermentioning
confidence: 99%
See 1 more Smart Citation
“…The embedding impedances of a Schottky diode with a sub-micron anode area were evaluated using a large-signal, harmonic-balance simulation. Using the built-in optimizer in the circuit simulator, the diode-embedding impedances at the RF, IF, and LO frequency were varied to provide a low mixer conversion loss L. The out-of-band frequencies were terminated by an open circuit (Z-mixer topology) [22], [23]. The RF optimum diode-embedding impedance of the Z-mixer is approximately Z RF = (60 + j80) Ω as shown in Fig.…”
Section: B Design Of the ×6-harmonic Mixermentioning
confidence: 99%
“…3. At the LO and IF the optimum impedances are approximately Z LO = (150 + j300) Ω and 1000 Ω respectively [23]. The predicted conversion loss L from the ideal Z-mixer circuit simulation was about 20 dB for a Schottky contact area of 0.11 µm 2 , an LO power = 2 dBm, no dc bias, and the losses from the mixer circuit were excluded.…”
Section: B Design Of the ×6-harmonic Mixermentioning
confidence: 99%
“…The embedding impedances of a Schottky diode with a sub-micron anode area were evaluated using a large-signal, harmonic-balance simulation. Using the built-in optimizer in the circuit simulator, the diode-embedding impedances at the RF, IF, and LO frequency were varied to provide a low mixer conversion loss L. The out-of-band frequencies were terminated by an open circuit (Z-mixer topology) [19], [20]. The RF optimum diode-embedding impedance of the Z-mixer is approximately Z RF = (60 + j80) Ω as shown in Fig.…”
Section: B Design Of the ×6-harmonic Mixermentioning
confidence: 99%