Effect of hydrogen on the photoluminescence properties of Mn-implanted GaN

Wang, J.Q.; Chen, P.P.; Mao, Huibing; Zhu, Zhen; Lü, Wei

doi:10.1016/j.physb.2005.01.145

“…2 The strong polarization-dependent XANES features also showed the preservation of the hexagonal symmetry in both cluster-free and Mn-rich regions, 4 while donor-and acceptor-bound exciton lines dominated the laser excited luminescence at 6 K. 3 Here, as a continuation of the previous reports, 2-4 its optical homogeneity will be also examined by XEOL mapping. 12,13 To study the two-dimensional spatial distribution of specific recombination channels, optical maps are obtained on a pixel-by-pixel basis by a multiple-Gaussian fitting procedure applied to each PL spectrum. 2.…”

mentioning

confidence: 99%

Scanning x-ray excited optical luminescence microscopy in GaN

Martı́nez-Criado

¹

,

Alén²,

Homs

³

et al. 2006

Applied Physics Letters

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In this work, an imaging tool to investigate optical inhomogeneities with site and chemical sensitivities has been integrated in a hard x-ray microprobe. Freestanding GaN and epitaxially grown GaN:Mn on α-Al2O3 are used to exploit the unprecedented scanning x-ray excited luminescence technique. Optical images of the radiative recombination channels are reported for several impurities and defect centers in sapphire and GaN compounds. Within the experimental accuracy, a visible nonuniformity characterizes the Mn centers in good correlation with former x-ray fluorescence map. Expanding the microprobe versatility, x-ray absorption spectroscopy in both photon collection modes (x-ray excited luminescence and x-ray fluorescence) is finally presented from a freestanding GaN layer.

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“…Thin films of GaMnN have been prepared through molecular-beam epitaxy (MBE) [55,[67][68][69][70][71][72][73][74][75][76][77][78][79][80][81][82][83] with a wide spread of substrate temperatures, deposition and annealing of a Mn-layer onto a GaN film [84,85], nebulised spray pyrolysis [86], metal organic chemical vapour deposition (MOCVD) [87,88], pulsed laser deposition (PLD) [89], Mn + [66,88,[90][91][92][93][94][95][96] or Mn + and N + [97] ion implantation into already-prepared GaN films. GaMnN has also been grown co-doped with a number of different elements [54,82,[98][99][100][101][102][103][104][105][106].…”

Section: Gamnn Preparation and Structurementioning

confidence: 99%

“…Red-and blue-shifts of the bandgap in Mn implanted or PLD films of ∼30 meV have both been seen [66,89], and are well correlated with a respective increase or decrease of the lattice parameter [95,109]. Numerous other optical characterisation studies exist that explore the energies of transitions involving intrinsic donor and acceptor levels, excitons or levels associated with dopants such as Mg and Si [80,103].…”

Section: Optical Properties and Mn Impurity Level Positionsmentioning

confidence: 99%

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

Granville¹

1

0

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<p>Materials that combine the useful properties of magnetic and semiconducting behaviours are sought for new and developing applications in electronics. In this thesis experimental studies of the properties of disordered thin films of several potentially magnetic semiconducting materials are presented. Previous research on the diluted magnetic semiconductor GaMnN is reviewed as an introduction to a study of GaMnN thin films grown with an ion-assisted deposition technique. Several complementary compositional and structural analysis techniques are used to determine that films can be grown with as much as 18 at. % Mn content and that contain no impurity phases, as are often detected in single crystalline GaMnN preparations with high Mn concentrations. The effects of varying Mn contents on the resistive, optical and magnetic properties of the thin films are investigated. The structural, electronic and magnetic properties of thin films of the potential impurity phase MnN have also been investigated and compared with band structure calculations. Recent predictions that the rare earth nitrides may have extremely useful electronic properties have been almost untested in the literature. A procedure for growing rare earth nitride thin films and capping them to protect from reaction with water vapour allows their resistivity, structural and magnetic properties to be established. The results on GdN, SmN, ErN and DyN support the recent predictions, and a more thorough study on GdN reveals that this material is a ferromagnetic semiconductor below 69 K.</p>

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“…Thin films of GaMnN have been prepared through molecular-beam epitaxy (MBE) [55,[67][68][69][70][71][72][73][74][75][76][77][78][79][80][81][82][83] with a wide spread of substrate temperatures, deposition and annealing of a Mn-layer onto a GaN film [84,85], nebulised spray pyrolysis [86], metal organic chemical vapour deposition (MOCVD) [87,88], pulsed laser deposition (PLD) [89], Mn + [66,88,[90][91][92][93][94][95][96] or Mn + and N + [97] ion implantation into already-prepared GaN films. GaMnN has also been grown co-doped with a number of different elements [54,82,[98][99][100][101][102][103][104][105][106].…”

Section: Gamnn Preparation and Structurementioning

confidence: 99%

“…Red-and blue-shifts of the bandgap in Mn implanted or PLD films of ∼30 meV have both been seen [66,89], and are well correlated with a respective increase or decrease of the lattice parameter [95,109]. Numerous other optical characterisation studies exist that explore the energies of transitions involving intrinsic donor and acceptor levels, excitons or levels associated with dopants such as Mg and Si [80,103].…”

Section: Optical Properties and Mn Impurity Level Positionsmentioning

confidence: 99%

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

Granville¹

0

View full text Add to dashboard Cite

<p>Materials that combine the useful properties of magnetic and semiconducting behaviours are sought for new and developing applications in electronics. In this thesis experimental studies of the properties of disordered thin films of several potentially magnetic semiconducting materials are presented. Previous research on the diluted magnetic semiconductor GaMnN is reviewed as an introduction to a study of GaMnN thin films grown with an ion-assisted deposition technique. Several complementary compositional and structural analysis techniques are used to determine that films can be grown with as much as 18 at. % Mn content and that contain no impurity phases, as are often detected in single crystalline GaMnN preparations with high Mn concentrations. The effects of varying Mn contents on the resistive, optical and magnetic properties of the thin films are investigated. The structural, electronic and magnetic properties of thin films of the potential impurity phase MnN have also been investigated and compared with band structure calculations. Recent predictions that the rare earth nitrides may have extremely useful electronic properties have been almost untested in the literature. A procedure for growing rare earth nitride thin films and capping them to protect from reaction with water vapour allows their resistivity, structural and magnetic properties to be established. The results on GdN, SmN, ErN and DyN support the recent predictions, and a more thorough study on GdN reveals that this material is a ferromagnetic semiconductor below 69 K.</p>

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Effect of hydrogen on the photoluminescence properties of Mn-implanted GaN

Cited by 4 publications

References 18 publications

Scanning x-ray excited optical luminescence microscopy in GaN

Scanning x-ray excited optical luminescence microscopy in GaN

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

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