Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition

Mass, J.; Bhattacharya, P.; Katiyar, Ram S.

doi:10.1016/s0921-5107(03)00127-2

Cited by 306 publications

(105 citation statements)

References 13 publications

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“…al. 25 In their report, the ZnO:Al film were prepared by pulsed laser deposition technique and the increase of resistivity with doping concentration above 2 at.% were attributed due to the sharp decrease of mobility.…”

Section: Resultsmentioning

confidence: 99%

Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

Shrestha¹,

Ghimire²,

Nakarmi³

et al. 2010

Bulletin of the Korean Chemical Society

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Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity (ρ), carrier concentration (n), and hall mobility (µ) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity (8.5 × 10 -2 ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

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Section: Resultsmentioning

confidence: 99%

Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

Shrestha¹,

Ghimire²,

Nakarmi³

et al. 2010

Bulletin of the Korean Chemical Society

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“…The interest in Al-doped ZnO is due to its improved electrical conductivity without compromising the transparency of the material in the visible region of light, [1][2][3][4] which makes the material applicable as a transparent conductive oxide. Aluminum-doped ZnO has also been found to exhibit unusually good thermoelectric properties for an oxide, reaching a figure-of-merit value as high as 0.3 at 1000 K. 5,6 For both optoelectronic and thermoelectric applications, the accurate control of the charge carrier density is a priority; it directly affects not only the electrical conductivity but also the Seebeck coefficient and thermal conductivity, i.e., the three properties that define the figure-of-merit for a thermoelectric material.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of Al-doped ZnO thin films

Tynell

Yamauchi

Karppinen

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inAtomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2 O 3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2 O 3 phase and no further carrier doping of ZnO is observed.

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“…By contrast, the stress in the films deposited at higher substrate temperatures increased with the at.% of Mo, even when the stoichiometric ratio of Mo in ZnO was maintained in the films. This finding is attributed to the thermal stress induced by higher substrate temperatures [31]. The variation of stress with temperature and Mo at.% is shown in Fig.…”

Section: Structural Investigationsmentioning

confidence: 83%

Physical investigations on transparent conducting Mo:ZnO thin films

Srinivasarao

Mohanbabu²,

Mukhopadhyay

2018

Adv Compos Hybrid Mater

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Molybdenum (Mo)-doped zinc oxide (ZnO) thin films were deposited by radio frequency (r.f.) magnetron sputtering on quartz and Si (100) substrates at two different substrate temperatures (473 and 673 K) and at a fixed combined partial pressure 5 Pa of Argon and O 2 . The atomic percentage (at.%) of (Mo) in ZnO was increased from 1 to 2 at.%. The results of X-ray diffraction revealed that the ZnO films deposited at 5 Pa at a substrate temperature of 473 K were highly c-axis oriented with a predominant (002) crystallographic orientation. The intensity of (002) decreased with an increase in the atomic percentage of Mo. Moreover, a growth in the (100), (101), (220), and (103) orientations was observed. The energy-dispersive spectrum (EDS) of the Mo:ZnO films deposited at 5 Pa and 473 K was substoichiometric, whereas the films deposited at 673 K were nearly stoichiometric. The surface morphology of the ZnO films is porous when deposited at 473 K. The optical energy gap of the ZnO films deposited at 473 K increased from 3.11 to 3.64 eV with an increase in the atomic percentage of Mo. The electrical resistivity of the ZnO films decreased from 1.7 × 10 −4 to 6.7 × 10 −5 Ωm with an increase in the substrate temperature and atomic percentage of Mo. The thickness of the films measured by spectroscopic ellipsometry is 440 nm.

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Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition

Cited by 306 publications

References 13 publications

Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

Atomic layer deposition of Al-doped ZnO thin films

Physical investigations on transparent conducting Mo:ZnO thin films

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