Abstract:The difference in the defect structures produced by different ion masses in a tungsten lattice is investigated using 80 MeV Au7+ ions and 10 MeV B3+ ions. The details of the defects produced by ions in recrystallized tungsten foil samples are studied using transmission electron microscopy. Dislocations of type b = 1/2[111] and [001] were observed in the analysis. While highly energetic gold ion produced small clusters of defects with very few dislocation lines, boron has produced large and sparse clusters with… Show more
“…Mechanically polished samples of 8 × 8 × 0.1 mm 3 size were annealed at 1838 K for about 50 min in a vacuum furnace at a base pressure of 0.1 Pa. The annealing was carried out in an inert environment of 10 4 Pa Ar + 8% H 2 gas to prevent the surface oxidation of tungsten at high temperature [51]. The samples were mechanically polished before annealing and were characterized using x-ray diffraction (XRD), four-probe resistivity measurements, PAS and transmission electron microscopy (TEM) both before and after annealing.…”
Surface-shifted deuterium profiles are re-examined in deuterium-ion irradiation experiments by using a combined experimental and modelling approach. Recrystallized tungsten foil samples were irradiated with energetic deuterium ions and the defect and deuterium depth profiles were studied using positron annihilation spectroscopy and secondary ion mass spectroscopy. We report direct experimental evidence of trapping of deuterium at the vacancies created by the deuterium ions themselves during the implantation by using positron annihilation studies. The deuterium profile is simulated using a Monte-Carlo diffusion model by taking into account the defect-aided diffusion of deuterium due to the local strain field created by the vacancies. The simulations also elucidate the role of the anisotropy in the diffusion and trapping of deuterium in ion-implantation experiments in metals.
“…Mechanically polished samples of 8 × 8 × 0.1 mm 3 size were annealed at 1838 K for about 50 min in a vacuum furnace at a base pressure of 0.1 Pa. The annealing was carried out in an inert environment of 10 4 Pa Ar + 8% H 2 gas to prevent the surface oxidation of tungsten at high temperature [51]. The samples were mechanically polished before annealing and were characterized using x-ray diffraction (XRD), four-probe resistivity measurements, PAS and transmission electron microscopy (TEM) both before and after annealing.…”
Surface-shifted deuterium profiles are re-examined in deuterium-ion irradiation experiments by using a combined experimental and modelling approach. Recrystallized tungsten foil samples were irradiated with energetic deuterium ions and the defect and deuterium depth profiles were studied using positron annihilation spectroscopy and secondary ion mass spectroscopy. We report direct experimental evidence of trapping of deuterium at the vacancies created by the deuterium ions themselves during the implantation by using positron annihilation studies. The deuterium profile is simulated using a Monte-Carlo diffusion model by taking into account the defect-aided diffusion of deuterium due to the local strain field created by the vacancies. The simulations also elucidate the role of the anisotropy in the diffusion and trapping of deuterium in ion-implantation experiments in metals.
“…Both TEM and XRD analysis confirm the re-crystallization of the samples with highly textured grains oriented along [200]. The grain size of the RC1 samples varied between 25 μm to 40 μm [19] and that of the RC2 samples varied between 25 μm to 150 μm. The open volume defects in the samples were characterized using positron lifetime spectroscopy (PALS) using a 22 Na positron source sandwiched between two identical W samples.…”
Section: Sample Preparation and Characterizationmentioning
confidence: 70%
“…TEM analysis of the samples has also shown extensive dislocation formation in the Au-and B-irradiated samples. We observed dislocation lines, loops and clusters in the BLF, BHF and Au-irradiated samples [16,19]. We found dislocations of edge, screw and mixed types with the majority being the mixed type (66%) in Au-irradiated samples and of the screw type in B-irradiated samples (44%).…”
Section: Defect Analysis Using Pals and Temmentioning
confidence: 84%
“…TEM analysis was carried out using an FEI Tecnai G2 F30 S-TWIN model microscope with a point resolution of 0.2 nm and a line resolution of 0.102 nm. Details of the analysis can be found in [19]. Both TEM and XRD analysis confirm the re-crystallization of the samples with highly textured grains oriented along [200].…”
Section: Sample Preparation and Characterizationmentioning
Experimental investigations on the role of ion mass and the primary knock-on atoms (PKA) spectrum in the defect type, structure and defect production efficiency is presented in ion-irradiation experiments in tungsten using a combination of positron annihilation spectroscopy, transmission electron microscopy and secondary ion mass spectroscopy. Recrystallized tungsten foils were irradiated using low- (helium), medium- (boron) and high-mass (gold) ions of MeV energy for a comparable dpa and implantation range at room temperature. Depending on the ion mass and the PKA spectrum, distinctly different defect structures were observed at the atomistic as well as meso-scales. While no indication of dislocation lines was observed in 3 MeV helium irradiated samples, the boron and gold ions showed extensive dislocation line formation. The cluster shape depends on the PKA energy and the cluster density depends on the irradiation fluence. The depth profile analysis of the defects in the helium-irradiated samples showed extensive helium trapping throughout the implantation range. Significant sub-surface helium trapping is observed within 700 nm from the surface, indicating that they moved towards the surface from their mean implantation depth of 4500 nm. The study also shows a correlation between carbon and helium profiles in the samples.
“…Figure 2 showed SRIM simulation calculation of 2.7 MeV Si 2+ ion implantation into pure tungsten that reached peak damage of 100 dpa using the model of Ion Distribution and Quick Calculation of Damage [ 30 ], and displacement energy of 90 eV [ 31 ], a total of 100,000 ions simulation were performed. The dose rate at different depths could be simulated by dividing the dose by the total irradiation time, as a result the dose rate corresponding to the damage peak was 1.2 × 10 −3 dpa/s.…”
An amount of 100 dpa Si2+ irradiation was used to study the effect of transmutation rhenium content on irradiated microscopic defects and hardening in W-xRe (x = 0, 1, 3, 5 and 10 wt.%) alloys at 550 °C. The increase in Re content could significantly refine the grain in the W-xRe alloys, and no obvious surface topography change could be found after high-dose irradiation via the scanning electron microscope (SEM). The micro defects induced by high-dose irradiation in W and W-3Re alloys were observed using a transmission electron microscope (TEM). Dislocation loops with a size larger than 10 nm could be found in both W and W-3Re alloy, but the distribution of them was different. The distribution of the dislocation loops was more uniform in pure W, while they seemed to be clustered around some locations in W-3Re alloy. Voids (~2.4 nm) were observed in W-3Re alloy, while no void was investigated in W. High-dose irradiation induced obvious hardening with the hardening rate between 75% and 155% in all W-xRe alloys, but W-3Re alloy had the lowest hardening rate (75%). The main reasons might be related to the smallest grain size in W-3Re alloy, which suppressed the formation of defect clusters and induced smaller hardening than that in other samples.
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