Effect of heat treatment on stress in amorphous silicon films

High Electrochemical Performance Silicon Thin-Film Free-Standing Electrodes Based on Buckypaper for Flexible Lithium-Ion Batteries

“…These results agreed well with those from a previous study, in which both the process temperature and time were important parameters for Si crystallization (sharp crystalline Si peak at 524 [33]) [35]. Another study reported that the nucleation of crystalline silicon occurs at a temperature of 650 °C [36]. During the first cycle, both buckypapers exhibited cathodic peaks at 0.4-0.75 V, which can be attributed to the SEI formation on the surface of the CNT film electrode (Figure 6a,b) [20,21,37,38].…”

“…These results agreed well with those from a previous study, in which both the process temperature and time were important parameters for Si crystallization (sharp crystalline Si peak at 524 [33]) [35]. Another study reported that the nucleation of crystalline silicon occurs at a temperature of 650 • C [36]. Figure 4 shows the SEM images of the buckypaper (a) before and (b) after heat-tre ment, as well as those of the (c) USi_HBP, and (d) HSi_HBP.…”

“…These results agreed well with those from a previous study, in which both the process temperature and time were important parameters for Si crystallization (sharp crystalline Si peak at 524 [ 33 ]) [ 35 ]. Another study reported that the nucleation of crystalline silicon occurs at a temperature of 650 °C [ 36 ].…”

“…The two electrodes demonstrated extremely high capacity, indicating that the heat treatment of buckypaper can triple the capacity ( Figure 7 ). The improved performance of the HSi_HBP electrode (an extremely stable cycling performance) can be attributed to the reduced hydrogen content in the amorphous silicon structure and the hanging bond, as well as factors such as internal stress after the heating process ( Figure 7 ) [ 36 , 47 , 48 ]. Furthermore, the rate capability of the electrodes was probed by applying different current densities ranging from 125 μA to 1000 μA (as shown in Figure 9 d).…”

Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Final report, 1 January 1979-31 May 1980

“…The problem of adhesion and residual s t r e s s e s in corrosion and wear r e s i s t a n t coatings has & a been known f o r a long time (Stoney 1909;Bronner,, 1S49;,Treahing, 1951 ) r , . , but the qmblem i n e l e c t r o n i c c o i t i n g s (such a s seniiconductors) is more reehrut one (Deesler, 1979;Koos, 1976;Kinosi ta, 1965). Some a v a i l a b l e experimental.…”