Effect of heat and moisture on thick positive photoresist

Mani, Behtash

doi:10.1109/emts.1989.68995

Cited by 1 publication

(1 citation statement)

References 8 publications

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“…Heat treatment was needed to remove the solvent in the deposited material to obtain crack-free PZT film structure. Although the 100 ºC used was lower than the AZ9260 photoresist maximum working temperature 110 ºC, several heat treatment processes could also cause evaporation of the residual solvent and water and degradation of the photoactive compound [11], which further induced the deformation of the deposited PZT structure. Fig.…”

Section: Height (µM)mentioning

confidence: 99%

Formation of PZT Thick Film Single Elements Using EHDA Deposition

Wang

Dorey

2009

MSF

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In this paper, electrohydrodynamic atomization combined with a polymeric micromoulding technique was used to form PZT single element devices using a PZT sol-gel slurry without an etching process. The PZT single element device was initially designed to work as a piezoelectric ultrasonic transducer consisting of a circular or a square of various sizes, which was produced and used to evaluate the process. The resulting PZT device had a homogenous microstructure. It was observed that the relative permittivity of the circular and square single element devices was especially high at small size due to the fringe effect. The results show that the radius and width of the PZT single circular and square element devices with a thickness of 15µm should be bigger than 400µm in order to reduce the fringe effect.

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Section: Height (µM)mentioning

confidence: 99%