Effect of hard bake process on LER

Padmanaban, Munirathna; Rentkiewicz, David; Lee, Sang-Ho; Hong, Chisun; Lee, Dongkwan; Rahman, Dalil; Sakamuri, Raj; Dammel, Ralph R.

doi:10.1117/12.604401

Cited by 9 publications

(2 citation statements)

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“…However, post development bake process induced large CD change of large pattern owing to the degradation of side wall angle of large resist pattern at the optimum hard bake temperature for the dense pattern. (2) The authors examined that CD change of large isolated pattern with post development bake process at optimum bake temperature for the dense pattern. CD change of large isolated pattern was more than 15% owing to degradation of pattern profiles.…”

Section: Introductionmentioning

confidence: 99%

LWR reduction in low-k1 ArF-immersion lithography

Matsunaga

Oori

Katō

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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Line width roughness (LWR) reduction is a critical issue for low k1 ArF immersion lithography. Various approaches such as materials, exposure technology and the track process have been performed for LWR reduction during lithography process. It was reported that the post-development bake process had good performance for LWR reduction (1) . However, the post-development bake process induced large CD change owing to the degradation of large isolated resist pattern (2) . Therefore post-development process with small iso-dense bias is required in low k1 ArF immersion lithography. The resist smoothing process is one of the candidates for LWR reduction with small iso-dense bias. This method whereby the resist pattern surface is partially melted in organic-solvent atmosphere was shown to have a significant LWR reduction effect on resist patterns (3) . This paper reports on the application of the resist smoothing process to the ArF immersion resist pattern after development. It was found that the resist smoothing process was effective to reduce LWR for ArF immersion resist. As a result of LWR trace from after development to after the hard mask etching process, the effect of LWR reduction with the resist smoothing process continued after the hard mask etching process. Furthermore CD change of large isolated patterns with the smoothing process was smaller than in the case of postdevelopment bake process. We confirmed that the resist smoothing process is an effective method for decreasing LWR in ArF immersion lithography.

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Section: Introductionmentioning

confidence: 99%

LWR reduction in low-k1 ArF-immersion lithography

Matsunaga

Oori

Katō

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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“…The main goal for the application of these processes is on how to reduce the roughness value while maintaining/with minimum effect on CD size. [126][127][128] Another factor considered is how these processes affect specific roughness frequencies, as determined by power spectral density (PSD) analysis. 17,129) This methodology has been applied as it has been shown that the total reduction in 3 LWR does not give a complete picture of the effects of the various smoothing techniques.…”

Section: Post-process Technologiesmentioning

confidence: 99%

Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

159

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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