2014
DOI: 10.1039/c4tc01548g
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Controlled roughness reduction of patterned resist polymers using laser-induced sub-millisecond heating

Abstract: High resolution resist polymers are critical for nanometer-scale lithography. Annealing developed polymer patterns with laser-induced heating at temperatures up to 450 °C for 500 μs minimizes surface energy and reduces pattern roughness.

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Cited by 5 publications
(5 citation statements)
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“…After the heat treatment beyond 50°C, the porous polymeric cover on the MCF observed at Figure 3d was also transformed into a smooth surface 50 . The smoothened surface upon heating (Figure 6j) was attributed to the conformation of polymer chains beyond the glass transition temperature 1,56 …”
Section: Resultsmentioning
confidence: 98%
See 1 more Smart Citation
“…After the heat treatment beyond 50°C, the porous polymeric cover on the MCF observed at Figure 3d was also transformed into a smooth surface 50 . The smoothened surface upon heating (Figure 6j) was attributed to the conformation of polymer chains beyond the glass transition temperature 1,56 …”
Section: Resultsmentioning
confidence: 98%
“…50 The smoothened surface upon heating (Figure 6j) was attributed to the conformation of polymer chains beyond the glass transition temperature. 1,56 Special attention was given to the balanced fractions referred as 50/50. Although type of the nanofibers being m-phase or x-phase were not distinguishable in the SEM images of the pristine fibers (not shown here), the heat treatment resulted in different morphologies in the vicinity and on the surface of the MCFs (Figures 5e,f and 6e,f).…”
Section: Morphology Of Particle-dualpolymeric Hybrid Systemsmentioning
confidence: 99%
“…The dramatically reduced area required for such combinatorial annealing studies can be coupled with other area-based combinatorial techniques to, for example, evaluate thermally induced phase formation over ternary compositional spreads. The lgLSA technique is based upon laser spike annealing (LSA), which was originally developed to activate dopants in silicon 11,12 but has recently also shown promise in photolithography 13 and directed self-assembly. 14 In LSA, a linefocused laser beam (typical aspect ratio 10:1 to 100:1) is scanned to locally heat a sample (Figure 1a), with temperature profiles determined by the laser intensity profile (Figure 1b), sample absorption, substrate thermal conductivity, and scan velocity.…”
Section: ■ Introductionmentioning
confidence: 98%
“…The lgLSA technique is based upon laser spike annealing (LSA), which was originally developed to activate dopants in silicon , but has recently also shown promise in photolithography and directed self-assembly . In LSA, a line-focused laser beam (typical aspect ratio 10:1 to 100:1) is scanned to locally heat a sample (Figure a), with temperature profiles determined by the laser intensity profile (Figure b), sample absorption, substrate thermal conductivity, and scan velocity.…”
Section: Introductionmentioning
confidence: 99%
“…22 Beyond self-assembly of block copolymers, LSA was used to control CD and linewidth roughness. 23 For 11nm half-pitch resolutions, the International Technology Roadmap for Semiconductors suggests a control of CD and linewidth roughness to o1 and 0.9 nm, respectively. Three commercially available resists were investigated including an acrylate-based polymer and two hybrid polymers (copolymers containing both poly(hydroxystyrene).…”
Section: Exploring Self-assembly Of Block Copolymersmentioning
confidence: 99%