Effect of growth temperature on C-doped InAlAs layers grown by LP-MOVPE

Ribeiro, Miguel; Souza, P. L.; Tribuzy, C.V.-B.; Pires, M. P.; Yavich, B.

doi:10.1016/s0022-0248(02)01831-6

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“…In early work on C-InAlAs, Ito and Ougazzaden used the extremely low growth temperature (T g ) of 530 1C [7,8]. Following this, several groups [9,10] have investigated the electrical characteristics of the C-InAlAs and found that a low T g (o575 1C) is necessary to keep the ptype carrier concentration. We have also demonstrated that the carbon concentration increases with decrease in T g , and have successfully achieved a p-doping over 1 Â 10 18 cm À3 at the higher T g of 580 1C [11].…”

Section: Introductionmentioning

confidence: 99%