Amplitude Modulators containing an nipi delta doping superlattice

Areiza, M.C.L.; Tribuzy, C.V.-B.; Landi, S. M.; Pires, M. P.; Souza, P. L.

doi:10.1109/lpt.2005.854415

Cited by 3 publications

(3 citation statements)

References 12 publications

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“…The need for high performance, low power modulator devices can be realised through the use of the quantum confined Stark effect (QCSE) and has been demonstrated in both QDs and quantum wells (QW) [2,3]. The influence of doping in QWs has been studied in [4]. It was shown that the incorporation of a modulation-doped superlattice in a multi-QW structure can lead to equivalent contrast ratios with a 1.8x reduction in applied voltage.…”

Section: Introductionmentioning

confidence: 99%

QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

Mahoney

Smowton

Maglio

et al. 2021

Conference on Lasers and Electro-Optics

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Section: Introductionmentioning

confidence: 99%

QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

Mahoney

Smowton

Maglio

et al. 2021

Conference on Lasers and Electro-Optics

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“…The 𝑄𝐶𝑆𝐸 is present in both 𝑄𝐷𝑠 and 𝑄𝑊 𝑠 [8][9][10][11][12][13][14][15][16]. One of the advantages of 𝑄𝐷𝑠 devices is that they are more resilient than 𝑄𝑊 devices when growing them over 𝑆𝑖 since the 𝑄𝑊 𝑠 are always affected by defects arising from the material lattice mismatch and different thermal expansion coefficients.…”

Section: Introductionmentioning

confidence: 99%

“…This is not the case of the 𝑄𝑊 stacks, which were thoroughly optimized to improve the 𝑄𝐶𝑆𝐸 for modulation. One successful method is the incorporation of barrier doping as shown in [12]. The study demonstrated that incorporating a modulation-doped superlattice in a multi-𝑄𝑊 structure can lead to equivalent 𝐸 𝑅𝑠 while reducing the applied voltage by almost half.…”

Section: Introductionmentioning

confidence: 99%

Measurement of the quantum-confined Stark effect in $InAs/In(Ga)As$ quantum dots with p-doped quantum dot barriers

Mahoney,

Tang,

Liu

et al. 2022

Preprint

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The quantum-confined Stark effect in 𝐼𝑛𝐴𝑠/𝐼𝑛(𝐺𝑎) 𝐴𝑠 quantum dots (𝑄𝐷𝑠) using non-intentionally doped and p-doped 𝑄𝐷 barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped 𝑄𝐷 barriers lead to a better Figure of Merit (𝐹𝑜𝑀), defined as the ratio of the change in absorption Δ𝛼 for a reverse bias voltage swing to the loss at 1 𝑉 𝛼(1 𝑉), 𝐹𝑜𝑀 = Δ𝛼/𝛼(1 𝑉). The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the 𝑄𝐷 barriers can lead to more than a 3𝑥 increase in 𝐹𝑜𝑀 modulator performance between temperatures of −73 • 𝐶 to 100 • 𝐶 when compared with the stack with 𝑁 𝐼 𝐷 𝑄𝐷 barriers.

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Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers

et al. 2022

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The quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped QD barriers lead to a better figure of merit (FoM), defined as the ratio of the change in absorption Δα for a reverse bias voltage swing to the loss at 1 V α(1 V), FoM=Δα/α (1 V). The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the QD barriers can lead to more than a 3x increase in FoM modulator performance between temperatures of −73 °C to 100 °C when compared with the stack with NID QD barriers.

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Amplitude Modulators containing an nipi delta doping superlattice

Cited by 3 publications

References 12 publications

QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

Measurement of the quantum-confined Stark effect in $InAs/In(Ga)As$ quantum dots with p-doped quantum dot barriers

Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers

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