Effect of growth parameters on formation and elimination of vacancy clusters in dislocation-free silicon crystals

Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals

“…A series of studies reported before mid 1980s established that self-interstitial aggregates exist in a crystal either as the dislocation loops known as A defects or the globular clusters known as B defects [1][2][3][4][5][6][7][8][9][10]; another series of studies showed that vacancy aggregates exist as octahedral voids termed D defects [11][12][13][14]. Oxygen clusters in a growing CZ crystal are typically very small.…”

The agglomeration dynamics of self-interstitials in growing Czochralski silicon crystals

“…In the regions grown at a lower V/G, interstitial agglomerates known as A defects and B defects are formed; and in the regions grown at a higher V/G, vacancy agglomerates known as D defects are formed. A defects were shown to be the dislocation loops, B defects are believed to be small globular interstitial clusters, and D defects are the octahedral voids [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Lateral incorporation of vacancies in Czochralski silicon crystals

“…A cluster containing m intrinsic point defects of type x is represented by P mx . The formation of oxygen clusters is assumed to be facilitated by the consumption of vacancies and is represented by reaction (5). For every oxygen atom, g vacancies are consumed in the formation of an oxygen cluster.…”

“…Microdefects are primarily formed by the aggregation of the intrinsic point defects of silicon, vacancies and self-interstitials, and by the vacancy-assisted aggregation of oxygen to form silicon dioxide particles or oxygen clusters. The self-interstitial aggregates exist in two forms, globular structures known as B defects and the dislocation loops known as A defects [1][2][3][4][5][6][7][8][9][10]. The octahedral vacancy aggregates are known as voids or D defects [11][12][13][14].…”