Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals

A Selective Review of the Simulation of the Defect Structure of Dislocation-Free Silicon Single Crystals

“…In article [42] suggested that during the cooling of the crystal in the temperature range 1683...1423 K occurs the formation of complexes VO and VO 2 (where V is the vacancy, O is the oxygen). However, these complexes do not lead to the formation of precipitates in this temperature range.…”

Comment on “Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited” [J. Appl. Phys. 110, 063519 (2011)]

“…This glaring mistake was never again repeated in subsequent publications on point defect dynamics. [7][8][9][10][11] All of these used the correct Eq. (2), differing only in the assumed value of e I which was often put to 0.…”

The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals

“…al., 2004). R e c e n t v e r s i o n s o f t h i s m o d e l h a v e s u g g e s t e d t h a t p a r t o f t h e v a c a n c i e s ( v ) i n t h e temperature range 1683 ... 1373 K, due to the interaction with oxygen (O) and nitrogen (N) impurities, are bound into complexes of the vO, vO 2 , and vN types (Kulkarni 2007;2008b). After the formation of microvoids, the aforementioned complexes grow and take up vacancies.…”

“…After the formation of microvoids, the aforementioned complexes grow and take up vacancies. This model has ignored the growth of the complexes by means of the injection of intrinsic interstitial silicon atoms and the interaction of an impurity with intrinsic interstitial silicon atoms (Kulkarni 2007;2008b).In the general case recombination-diffusion model assumes that the process of defect formation in dislocation-free silicon single crystals occurs in four stages: (i) fast recombination of intrinsic point defects near the crystallization front; (ii) the formation in the narrow temperature range 1423...1223 K depending on the value of V g /G microvoids or interstitial dislocation loops; (iii) the formation of oxygen clusters in the temperature range 1223...1023 K; (iv) growth of precipitates as a result of subsequent heat treatments.Recombination-diffusion model is the physical basis for models of the dynamics of point defects. The mathematical model of point defect dynamics in silicon quantitatively explains the homogeneous mechanism of formation of microvoids and dislocation loops.…”

“…After the formation of microvoids, the aforementioned complexes grow and take up vacancies. This model has ignored the growth of the complexes by means of the injection of intrinsic interstitial silicon atoms and the interaction of an impurity with intrinsic interstitial silicon atoms (Kulkarni 2007;2008b).…”