Effect of growth and annealing temperatures on crystallization of tantalum pentoxide thin film prepared by RF magnetron sputtering method

Wu, Shih-Jeh; Houng, Boen; Huang, Bo-sen

doi:10.1016/j.jallcom.2008.07.126

Cited by 46 publications

(29 citation statements)

References 20 publications

(27 reference statements)

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“…In general, to improve structural and optical properties of the deposited oxide on a substrate, post-deposition annealing is performed at various temperatures and ambients [52][53][54]. The effects of annealing temperature and ambient have been shown by pulsed laser deposited [55] and RF magnetron sputtered tantalum oxide (Ta 2 O 5 ) [56], successive ionic layer adsorption and reaction technique deposited [57] as well as pulsed laser deposited ZnO film [31], and pulsed laser deposited titanium oxide (TiO 2 ) thin film [58], indicating that physical properties of the deposited films were improved.…”

Section: Introductionmentioning

confidence: 99%

Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Lim

Cheong

Lockman

2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Lim

Cheong

Lockman

2010

Journal of Alloys and Compounds

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“…Binding energy and chemical atomic ratio O:Ta calculated from XPS data at different substrate temperatures by Wu et al[20].…”

mentioning

confidence: 99%

Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering

Wei

Zhao

et al. 2011

Journal of Alloys and Compounds

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“…The surface roughness is comparable to earlier work. However, the surface chemical atomic ratio is lower than the ideal stoichiometric value of 1:2.5 [31]. A high temperature and pure oxygen atmosphere is incompatible with both the fabrication technique and CMOS technology.…”

Section: B Post-processing Of the Cmos Chipmentioning

confidence: 99%

“…The working pressure was 100 µbar. It has been shown that an optimised process can deposit films with an ideal surface stoichiometric ratio and good surface roughness [31]- [33]. As shown in Fig.…”

Section: B Post-processing Of the Cmos Chipmentioning

confidence: 99%

An Integrated Circuit for Chip-Based Analysis of Enzyme Kinetics and Metabolite Quantification

Cheah

MacDonald

Martin

et al. 2016

IEEE Trans. Biomed. Circuits Syst.

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Abstract-We have created a novel chip-based diagnostic tools based upon quantification of metabolites using enzymes specific for their chemical conversion. Using this device we show for the first time that a solid-state circuit can be used to measure enzyme kinetics and calculate the Michaelis-Menten constant. Substrate concentration dependency of enzyme reaction rates is central to this aim. Ion-sensitive field effect transistors (ISFET) are excellent transducers for biosensing applications that are reliant upon enzyme assays, especially since they can be fabricated using mainstream microelectronics technology to ensure low unit cost, mass-manufacture, scaling to make many sensors and straightforward miniaturisation for use in point-of-care devices. Here, we describe an integrated ISFET array comprising 2 16 sensors. The device was fabricated with a complementary metal oxide semiconductor (CMOS) process. Unlike traditional CMOS ISFET sensors that use the Si 3 N 4 passivation of the foundry for ion detection, the device reported here was processed with a layer of Ta 2 O 5 that increased the detection sensitivity to 45 mV/pH unit at the sensor readout. The drift was reduced to 0.8 mV/hour with a linear pH response between pH 2 -12. A high-speed instrumentation system capable of acquiring nearly 500 fps was developed to stream out the data. The device was then used to measure glucose concentration through the activity of hexokinase in the range of 0.05 mM -231 mM, encompassing glucose's physiological range in blood. Localised and temporal enzyme kinetics of hexokinase was studied in detail. These results present a roadmap towards a viable personal metabolome machine. Index Terms-Biosensor, CMOS, electrochemical sensor, enzyme kinetics, hexokinase, ion-sensitive field effect transistors (ISFET), metabolomics, point-of-care (POC) diagnostics.

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Effect of growth and annealing temperatures on crystallization of tantalum pentoxide thin film prepared by RF magnetron sputtering method

Cited by 46 publications

References 20 publications

Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering

An Integrated Circuit for Chip-Based Analysis of Enzyme Kinetics and Metabolite Quantification

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