2020
DOI: 10.1016/j.matchemphys.2020.123196
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Effect of grain boundary interfaces on electrochemical and thermoelectric properties of a Bi2Te3/reduced graphene oxide composites

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Cited by 20 publications
(8 citation statements)
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“…The Seebeck coefficient is negligible compared to the natural logarithm of the carrier concentration (n) of each sample. The scattering factors match well with theoretical and experimental calculations [42,43]. In heavy composite compounds, antisite defects of Bi(In) on Te(Se) reduce the mobility with an increase in carrier concentration [44].…”
Section: Seebeck Coefficientsupporting
confidence: 79%
See 1 more Smart Citation
“…The Seebeck coefficient is negligible compared to the natural logarithm of the carrier concentration (n) of each sample. The scattering factors match well with theoretical and experimental calculations [42,43]. In heavy composite compounds, antisite defects of Bi(In) on Te(Se) reduce the mobility with an increase in carrier concentration [44].…”
Section: Seebeck Coefficientsupporting
confidence: 79%
“…The missing of peak 102 in (Bi 0.98 In 0.02 ) 2 Te 2.7 Se 0.3 /0.02 wt% rGO composite is due to lattice structural phase transition, leads to the orientation of host lattice (Bi 0.98 In 0.02 ) 2 Te 2.7 Se 0.3 towards the higher symmetry [25,26]. There are no peaks from rGO due to the small weight fraction in the (Bi 0.98 In 0.02 ) 2 Te 2.7 Se 0.3 matrix [27]. The crystallite size (D) and strain (ε) were quantified using the Williamson-Hall (WH) method βhkl =…”
Section: X-ray Diffraction (Xrd) Studymentioning
confidence: 99%
“…TE properties can be present together with magnetic ones-as in the Bi 2 Sr 2 Co 1.8 O y phase created by Özçelik and coworkers [19]. Pristine Bi 2 Te 3 and Bi 2 Te 3 /reduced graphene oxide (Bi 2 Te 3 + rGO) composites show good electrochemical and thermoelectric properties at 1% rGO concentration-a result of the interaction of the grain boundary interfaces of rGO nanosheets with pristine Bi 2 Te 3 -as reported by Thongsamrit and coworkers [20]. There are also CoSb 3 skutterudites [21], used in TE devices for high energy conversion efficiency.…”
Section: Introductionmentioning
confidence: 61%
“…After developing the optimal curing procedures for HTPs [20], we encapsulated both p-type and n-type skutterudite-based samples and subjected them to sintering up to 250 Due to oxidation during the sintering process, the resistivity values increased with longer sintering time in control samples (uncoated) for both p-type and n-type skutteruditebased samples. Compared with control samples at different sintering times, coatings mitigated the resistivity changes in any condition.…”
Section: Electrical Resistivitymentioning
confidence: 99%
“…The diffraction patterns are fit into diffraction lines of (1 0 1), (1 0 5), (1 0 1 0), (1 1 0), (2 0 5), (0 2 1 0), (1 1 1 5), and (1 2 5). [39][40][41] Figure 1f shows the resistance against the reduction cycle of Bi 2 Te 3 TE fabric. The resistance decreases with the number of reduction cycles because the number of Bi 2 Te 3 NPs increases with an additional reduction, resulting in electrically favorable conformation.…”
Section: Resultsmentioning
confidence: 99%