2016 International Conference on Nanomaterials: Application &Amp; Properties (NAP) 2016
DOI: 10.1109/nap.2016.7757282
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Effect of giant magnetoresistance in a symmetric magnetically sandwich

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Cited by 2 publications
(3 citation statements)
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“…In magnetically ordered sandwiches as Co/Cu/Co, electrons whose spin direction coincides with the direction of the spontaneous magnetization vector in the magnetic layer of the metal are effective, responsible for the effect (Pippard's concept of "inefficiency" [6]). Such electrons are called majority electrons, and all the last charge carriers are called minority charge carriers (electrons got this name by analogy with the concept of "main" and "non-main" charge carriers in semiconductor physics (note of the translator of the article [13]).…”
Section: Co/cu/co Systemsmentioning
confidence: 99%
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“…In magnetically ordered sandwiches as Co/Cu/Co, electrons whose spin direction coincides with the direction of the spontaneous magnetization vector in the magnetic layer of the metal are effective, responsible for the effect (Pippard's concept of "inefficiency" [6]). Such electrons are called majority electrons, and all the last charge carriers are called minority charge carriers (electrons got this name by analogy with the concept of "main" and "non-main" charge carriers in semiconductor physics (note of the translator of the article [13]).…”
Section: Co/cu/co Systemsmentioning
confidence: 99%
“…Such effects include, in particular, the effect of giant magnetoresistance (GMO), which is observed in three-layer (multilayer) films, which consist of magnetic metal layers separated by non-magnetic layers. The thickness of the interlayers is selected in such way that the interaction between the magnetic layers of the metal has an antiferromagnetic character (ap-interaction), as a result the magnetization vectors M in the adjacent metal layers are oriented in in opposite directions [4][5][6]. Placing such structure in a relatively low external magnetic field orients the magnetization vectors M in parallel (p -interaction), which leads either to a significant decrease in the magnetoresistance (MR) of the conductor (negative effect of GMR), or to a significant increase in the MR (positive, the inverse effect of GMR) [7].…”
Section: Introductionmentioning
confidence: 99%
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