Effect of Gaussian disorder on the voltage dependence of the current density in sandwich-type devices based on organic semiconductors

Effects of disorder on the current density and recombination profile in organic light-emitting diodes

“…4 in Ref. 34; disorder leads to a larger or smaller value of n c , depending on the applied voltage.…”

“…The continuum model presented in Ref. 34 is in practice preferred for single-carrier and single-layer studies, in view of its higher computational efficiency. However, the 1D-ME model presented here is more versatile, as it allows for taking double-carrier transport and complex layer structures ͑see the outlook in Sec.…”

Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions

“…In the above device-modeling studies within the EGDM and ECDM, a one-dimensional (1D) continuum drift 8 or drift-diffusion equation 9,14 was solved using a mobility with a parametrization of the dependence on temperature, electric field, and carrier density based on a numerical solution for the mobility obtained by solving the Pauli master equation for the site-occupational probabilities. 8,10 In order to investigate the consistency of this approach and to study the injection of carriers in more detail, we recently performed a computational study of single-carrier devices by solving the Pauli master equation for a collection of sites representing a full three-dimensional (3D) device, including its electrodes.…”

Hole Transport in Diketopyrrolopyrrole (DPP) Small Molecules: A Joint Theoretical and Experimental Study

“…At voltages higher than V bi , the drift current takes over and the J−V curve is described by a spacecharge-limited current (SCLC), which originates from the fact that the accumulated space charge inhibits further carrier injection until an equilibrium is reached inside the material with a uniform current density and a nonuniform electric field distribution. 37 Therefore, in order to model J−V curves for the entire voltage range, the well-established drift-diffusion model 38 is used here by considering both current contributions: 20,38−40…”