Effect of gate field plate and Γ(gamma)-gate structures on RF power performance of AlGaN/GaN HEMTs

Toprak, Ahmet; Haliloglu, M. Taha; Durmus, Yildirim; Sen, Ozlem; Özbay, Ekmel

doi:10.1109/eumic.2015.7345107

“…The Γ-gate structure is effective in controlling the electric field to make the G m curve flatter because of the gate field plate. 30 The relationships between G m′′ and OIP3, G m are shown in Eq. 3.…”

Section: Resultsmentioning

confidence: 99%

Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications

Hsu

¹

,

Lin

²

,

Yang

³

et al. 2023

ECS J. Solid State Sci. Technol.

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We investigated the device noise and linearity of an AlGaN/GaN HEMT with an optimized Γ-Gate structure for Ka-band applications. The Γ-Gate was used to provide low gate resistance for the device by increasing the gate cross-section and acting as a gate field plate to achieve a flat transconductance (Gm) profile. The device's Gm profile was analyzed under different gate positions, including at the center or close to the source. Under different bias conditions, we performed the optimization of the Γ-gate head length (Lhead). The results show that an excellent minimum noise figure (NFmin) for the device can be achieved when the Γ-gate is positioned close to the source with an optimum Lhead. Finally, the NFmin improved from 1.9 dB to 1.59 dB and the third-order intercept point (OIP3) value improved from 27.7 to 31.1 dBm when the source-drain distance was reduced from 2.5 to 2 μm. It was demonstrated that the optimized Γ-Gate design has the potential to attain the device with low noise and high linearity.

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“…Finally, Ti/Au metal stack with a total thickness of 3m had been deposited as an interconnection using e-beam evaporation. The details of the fabrication,DC and RF performance comparison of the fabricated devices were given in [3].…”

Section: Fabrication Technologymentioning

confidence: 99%

X Band GaN Based MMIC Power Amplifier with 36.5dBm P<inf>1-dB</inf> for Space Applications

Gurdal¹,

Yılmaz²,

Cengiz³

et al. 2018

2018 48th European Microwave Conference (EuMC)

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4

0

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An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (P1dB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.

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“…Finally, Ti/Au metal stack with a total thickness of 3m had been deposited as an interconnection using e-beam evaporation. The details of the fabrication,DC and RF performance comparison of the fabricated devices were given in [3]. In order to observe the transistor performance; DC characterization, small signal and large signal characterizations were performed respectively for 8x125μm HEMT device which has 3μm drain-source spacing.…”

Section: Fabrication Technologymentioning

confidence: 99%

X Band GaN Based MMIC Power Amplifier with 36.5dBm P<inf>1-dB</inf> for Space Applications

Gurdal

¹

,

Yılmaz

²

,

Cengiz

³

et al. 2018

2018 13th European Microwave Integrated Circuits Conference (EuMIC)

Self Cite

0

View full text Add to dashboard Cite

An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (P1dB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.

show abstract

Effect of gate field plate and Γ(gamma)-gate structures on RF power performance of AlGaN/GaN HEMTs

Cited by 4 publications

References 7 publications

Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications

Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications

X Band GaN Based MMIC Power Amplifier with 36.5dBm P<inf>1-dB</inf> for Space Applications

X Band GaN Based MMIC Power Amplifier with 36.5dBm P<inf>1-dB</inf> for Space Applications

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