Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (1 1 1) substrates by using hydride vapor-phase epitaxy

Effects of temperature and HCl:NH3 flow ratio on the growth of GaN nanorods

“…Among these, lots of studies have been progressed by MOCVD and MBE. However the studies of nanostructures by HVPE have been just performed by few groups [13][14][15] its promising advantages of higher growth rate and lower cost than MOCVD or MBE.…”