Effects of temperature and HCl:NH3 flow ratio on the growth of GaN nanorods

Moon, J.Y.; Kwon, H.Y.; Choi, Yun-Jeong; Shin, Min Jeong; Yi, Sam Nyung; Yun, Yong Ju; Kim, S.; Ha, Dong-Woo; Sug, Joung Young

doi:10.1016/j.jallcom.2009.02.078

Cited by 11 publications

(2 citation statements)

References 26 publications

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“…In previous studies, we described the growth conditions required for the formation of GaN nanostructures using the HVPE method. 21,22) At that time, we obtained several types of morphologies: nanoneedles, nanorods, and grain-shaped structures at 600, 650, and 700 C, respectively. We obtained uniform 350-nm-diameter GaN nanorods at a HCl:NH 3 ratio of 1 : 40, determined by varying the ratio from 1 : 25 to 1 : 45.…”

Section: Resultsmentioning

confidence: 99%

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

Shin

Kim

Jeon

et al. 2012

Jpn. J. Appl. Phys.

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We studied GaN nanorods grown by hydride vapour phase epitaxy processes to identify optimal growth conditions that yield nanorods appropriate for use in nanodevices. The growth temperature was varied over the range 625–670 °C, and the morphology of the samples changed with increasing growth temperature. GaN nanorods formed at growth temperatures of 645 °C on a Si(111) substrate. At a fixed growth temperature of 645 °C, the HCl:NH3 gas flow ratio was adjusted from 1:37 to 1:41. GaN nanorods with a small diameter of 26 nm formed at a HCl:NH3 ratio of 1:38. Individual GaN nanorods clearly grew along the axial direction, perpendicular to the substrate. Cathodoluminescence measurements at room temperature revealed a red shift as the acceleration energy was increased to 15 keV, possibly associated with the internal electric field.

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Section: Resultsmentioning

confidence: 99%

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

Shin

Kim

Jeon

et al. 2012

Jpn. J. Appl. Phys.

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“…The crystallite arrangement during the nucleation of GaN NRs depends strongly on experimental parameters such as the temperature, the substrate surface pretreatment, and the V/III ratio. , …”

Section: Discussion: Gan Nr Growth Mechanismmentioning

confidence: 99%

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Lekhal

André

Trassoudaine

et al. 2012

Crystal Growth & Design

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GaN nanorods (NRs) with exceptional crystal-defined morphologies were grown by near-equilibrium hydride vapor phase epitaxy (HVPE) on c-plane sapphire (0001) and silicon (111) substrates. Hexagonal faceted individual, bunched, and hyperbunched GaN NRs were synthesized by using a catalyst-free process. GaN NRs with a diameter in the range of 125–700 nm and a length in the range of 0.9–3 μm were grown in a record short process time of 30 min. The influence of growth temperature and ammonia gas flow rate was investigated to establish the nucleation and the growth mechanisms of the GaN NRs. Shape and crystallographic facets of the NRs are discussed and a condensation growth mechanism is proposed for the formation of bunched GaN NRs. Emphasis is placed on the crystal symmetry of the nuclei in the first stage of growth. The morphology and the structural properties were analyzed by field emission scanning electron microscopy (SEM) and X-ray diffraction spectroscopy (XRD).

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Exceptionally long GaN sub-micrometer rods grown by HVPE on a MOCVD-GaN rod template

Cheng

Zong

et al. 2016

Journal of Alloys and Compounds

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Effects of temperature and HCl:NH3 flow ratio on the growth of GaN nanorods

Cited by 11 publications

References 26 publications

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Exceptionally long GaN sub-micrometer rods grown by HVPE on a MOCVD-GaN rod template

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