Effect of Gas Flow Rate in PECVD of Amorphous Silicon Thin Films for Interface Passivation of Silicon Heterojunction Solar Cells

Pandey, Ashutosh; Bhattacharya, Shrestha; Panigrahi, Jagannath; Mandal, Sourav; Komarala, Vamsi K.

doi:10.1002/pssa.202200183

Cited by 12 publications

(5 citation statements)

References 30 publications

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“…This could lead to a wider use of solar energy as a clean and renewable energy source [29]. Here we present, a-Si: H nanostructures on a solid nanosphere substrate by incorporating reactive hydrogen ions [30]. Due to the low aspect ratio of a-Si: H nanowires, the light trapping effect was almost invisible in previous studies [31].…”

Section: Introductionmentioning

confidence: 91%

Electronic structure of P-type amorphous silicon nanowires

Prayogi,

Kresna,

Cahyono

et al. 2023

Phys. Scr.

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Silicon nanowires can improve broadband optical absorption and reduce the radial carrier collection distance in solar cell devices. The disordered nanowire arrays grown by the Plasma-Enhanced Chemical Vapor Deposition method are attractive because they can be embedded on low-cost substrates such as glass, and are compatible with large areas. Here, we experimentally demonstrate that reactive Hydrogen ions with increasing concentrations are doped to construct nanowire architectures in amorphous silicon solar cells. Similar to our investigated planar a-Si: H layers, the amorphous silicon nanowires exhibit a loss function coefficient of about 105/cm. From the reflectivity function, it can be shown that the nanostructures can offer a reliable carrier pool. Our results show that the addition of nanowires can increase the efficiency of a-Si solar cells from 1.11% to 1.57%. The input-photon-to-current conversion efficiency spectrum shows effective carrier collection from 1.2 to 2.2 eV of incident light and the nanowire devices show an increase in short-circuit current of 15% with amorphous Si and 26% with nanocrystalline Si compared to planar devices appropriate.

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Section: Introductionmentioning

confidence: 91%

Electronic structure of P-type amorphous silicon nanowires

Prayogi,

Kresna,

Cahyono

et al. 2023

Phys. Scr.

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“…Subsequently, the obtained pyramids were rounded through a chemical polishing step using HNO 3 , CH 3 COOH, and HF in the ratio of 10:2:1 for 20 s. Further, the textured wafers were cleaned using the standard RCA procedures followed by an HF dip before loading them into the PECVD chamber. Both sides ∼8 nm i-a-Si:H layers were deposited in one reaction chamber with SiH 4 :H 2 gas flow ratio 1:1 [16]. Further, the ∼20 nm n-nc-Si:H layer was deposited in the same chamber using 27.12 MHz frequency at 200 °C at 1 Torr pressure and 122 mW cm −2 power density (P d ) for 15 min.…”

Section: Fabrication and Characterization Of Front Emitter Shj Solar ...mentioning

confidence: 99%

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Bhattacharya,

Pandey,

Alam

et al. 2024

Nanotechnology

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We have investigated the PECVD growth of the phosphorus-doped hydrogenated nanocrystalline silicon (n-nc-Si:H) film as an electron-selective layer in silicon heterojunction (SHJ) solar cells. The effect of power densities on the precursor gas dissociation are investigated using optical emission spectra and the crystalline fraction in n-nc-Si:H films are correlated with the dark conductivity. With the Pd of 122 mW/cm2 and ~2% phosphorus doping, we observed Raman crystallinity of 53%, high dark conductivity of 43 S/cm, and activation energy of ~23 meV from the ~30 nm n-nc-Si:H film. The n-nc-Si:H layer improves the textured c-Si surface passivation by two-fold to ~2 ms compared to the phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) layers. An enhancement in the open-circuit voltage and external quantum efficiency (from >650 nm) due to the better passivation at the rear side of the cell after integrating the n-nc-Si:H layer compared to its n-a-Si:H counterpart. An improvement in the charge carrier transport is also observed with an increase in fill factor from ~71 % to ~75 %, mainly due to a reduction in electron-selective contact resistivity from ~271 mΩ-cm2 to ~61 mΩ-cm2. Finally, with the relatively better c-Si surface passivation and carrier selectivity, a power conversion efficiency of ~19.90% and pseudo-efficiency of ~21.90% have been realized from the SHJ cells.

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“…Finally, a largearea SHJ solar cell was created with a V OC of 0.732 V and an efficiency of 22.25%. Pandey et al 35 applied RF-PECVD at 13.56 MHz to deposit a-Si: H films on both sides of n-type Si wafers. The substrate temperature was set at 230 °C, the interelectrode spacing was fixed at 20 mm, the deposition pressure was 1 Torr, the power density was 44 mW cm −2 , the V(SiH 4 ):V(H 2 ) ratio was set at 1:1, and the total gas flux (FR) varied from 30 sccm to 80 sccm.…”

Section: Surface Passivation Materialsmentioning

confidence: 99%

Review—Process Research on Intrinsic Passivation Layer for Heterojunction Solar Cells

Shi¹,

Shi²,

Ge³

et al. 2023

ECS J. Solid State Sci. Technol.

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On top of a crystalline silicon wafer, heterojunction solar cells have a thin layer of amorphous silicon (a-Si) placed on them. The efficiency of heterojunction solar cells can be increased by decreasing the electron complex loss by adding an intrinsic passivation layer to a monocrystalline silicon (c-Si) substrate. In this study, we examine the development of the intrinsic passivation layer deposition technique on c-Si substrates over the previous ten years by several research teams. First, a description of the structure, benefits, and passivation of heterojunction solar cells is given. Following that, the impact of modifying process variables on the functionality of the passivation layer and cell efficiency is explored in terms of the passivation material, hydrogen dilution ratio, substrate temperature, and post-deposition annealing. Last but not least, the ideal process parameters are summed up and potential future research areas are predicted. One of the best ways to increase the conversion efficiency of heterojunction solar cells is through surface passivation technology, and future domestic and international research will focus heavily on the process technology of its intrinsic passivation layer.

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Effect of Gas Flow Rate in PECVD of Amorphous Silicon Thin Films for Interface Passivation of Silicon Heterojunction Solar Cells

Cited by 12 publications

References 30 publications

Electronic structure of P-type amorphous silicon nanowires

Electronic structure of P-type amorphous silicon nanowires

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Review—Process Research on Intrinsic Passivation Layer for Heterojunction Solar Cells

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